Observation of fluorine-vacancy complexes in silicon

• We show direct evidence, obtained by positron annihilation spectroscopy, for the complexing of fluorine with vacancies in silicon. Both float zone and Czochralski silicon wafers were implanted with 30  keV fluorine ions to a fluence of 2×1014 ions/cm2, and studied in the as-implanted condition, and after annealing to 650  °C for 10 and for 30  min. The "2-detector" background reduction technique for positron annihilation was applied. The spectra reveal a significant concentration of fluorine-vacancy complexes after annealing, for both Czochralski and float zone material, supporting the results of computer simulations of the implantation and annealing process.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

Condensed matter physics

Kondenserade materiens fysik

Defects and diffusion

Defekter och diffusion

Semiconductor physics

Halvledarfysik

materialvetenskap

Materials Science

Publication and Content Type

ref (subject category)

art (subject category)