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A CPW Probe to Rect...
A CPW Probe to Rectangular Waveguide Transition for On-wafer Micromachined Waveguide Characterization
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- Beuerle, Bernhard, 1983- (författare)
- KTH,Mikro- och nanosystemteknik
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- Campion, James, 1989- (författare)
- KTH,Mikro- och nanosystemteknik
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- Glubokov, Oleksandr (författare)
- KTH,Mikro- och nanosystemteknik
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visa fler...
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- Shah, Umer, 1982- (författare)
- KTH,Mikro- och nanosystemteknik
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- Oberhammer, Joachim, Professor (författare)
- KTH,Mikro- och nanosystemteknik
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visa färre...
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(creator_code:org_t)
- Engelska.
- Relaterad länk:
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https://urn.kb.se/re...
Abstract
Ämnesord
Stäng
- A new transition from coplanar waveguide probe to micromachined rectangular waveguide for on-wafer device characterization is presented in this article. The transition is fabricated in the same double H-plane split silicon micromachined waveguide technology as the devices under test, requiring no additional post-processing or assembly steps. We outline the design and fabrication process of the transition for the frequency band of 220 – 330 GHz. A coplanar waveguide structure acts as the probing interface, with an E-field probe protruding in the waveguide cavity exciting the fundamental waveguide mode. Guard structures around the E-field probe increase the aspect ratio during deep reactive ion etching and secure its geometry. A full equivalent circuit model is provided by analyzing its working principle. RF characterization of fabricated devices is performed for both single-ended and back-to-back configurations. Measured S-parameters of the single-ended transition are obtained by applying a two-tiered calibration and are analyzed using the equivalent circuit model. The insertion loss of the single-ended transition lies between 0.3 dB and 1.5 dB over the whole band, with the return loss in excess of 8 dB. In addition to previously reported characterization of a range of devices under test the viability of the transition for on-wafer device calibration is demonstrated by characterizing a straight waveguide line, achieving an insertion loss per unit length of 0.02 – 0.08 dB/mm in the frequency band of 220 – 330 GHz.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Coplanar waveguide (CPW) probe
- silicon micromachining
- submillimeter wave
- terahertz
- transition
- waveguide probe
- waveguide
Publikations- och innehållstyp
- vet (ämneskategori)
- ovr (ämneskategori)