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Effects of nitrogen...
Effects of nitrogenmonoxide on 4H-SiC(0 0 0 1)
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- Virojanadara, Chariya (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Johansson, Leif (författare)
- Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
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(creator_code:org_t)
- 2003
- 2003
- Engelska.
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Ingår i: Surface Science. - 0039-6028 .- 1879-2758. ; 530:1-2, s. 17-25
- Relaterad länk:
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https://urn.kb.se/re...
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visa fler...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Effects induced by nitrogenmonoxide (NO) exposures on the v3 × v3 R30° reconstructed 4H-SiC(0 0 0 1) surface are reported. NO exposures from 0.3 to 1 × 106 L at a substrate temperature of 800 °C are investigated. Recorded Si2p spectra show three shifted components, besides the bulk SiC peak. These are assigned to originate from SiO2, N-Si-O and Si3N4/Si+1 (since we cannot distinguish between Si3N4 and an Si+1 oxidation state). It can be concluded that SiO2 does grow on top of N-Si-O and that Si3N4/Si+1 is located at the interface. Two N1s components are observed after NO exposures. A main one, located at around 398.05 eV, assigned to originate from Si3N4 and a weaker one suggested to correspond to N-Si-O bonding. The assignments are made using Si2p and N1s spectra collected after NH3 and O2 exposures under similar conditions. No graphite like carbon or carbon by-product at the interface can be detected after large NO or O2 exposures. © 2003 Elsevier Science B.V. All rights reserved.
Nyckelord
- Nitrides
- Nitrogen oxides
- Oxidation
- Silicon
- Silicon carbide
- TECHNOLOGY
- TEKNIKVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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