Photo-induced and resist-free imprint patterning of fullerene materials for use in functional electronics

• We report a novel and potentially generic method for the efficient patterning of films of organic semiconductors and demonstrate the merit of the method on the high-solubility fullerene [6,6]-phenyl C61- butyric acid methyl ester (PCBM). The patterning technique is notably straightforward as it requires no photoresist material and encompasses only two steps: (i) exposure of select film areas to visible laser light during which the PCBM mononer is photochemically converted into a dimeric state, and (ii) development via solvent washing after which the nonexposed portions of the PCBM film are selectively removed. Importantly, the method is highly benign in that it leaves the electronic properties of the remaining patterned material intact, which is directly evidenced by the fact that we fabricate fully functional arrays of micrometersized field-effect transistors with patterned PCBM as the active material.

Subject headings

NATURVETENSKAP  -- Fysik -- Atom- och molekylfysik och optik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Atom and Molecular Physics and Optics (hsv//eng)

Keyword

Thin-film transistors

field-effect transistors

plastic solar-cells

C-60 films

soft lithography

MDMO-PPV

devices

spectroscopy

absorption

deposition

Chemical physics

Kemisk fysik

fysik

Physics

Publication and Content Type

ref (subject category)

art (subject category)