Electrical resistance of Rb4C60 under pressure

• We report the results of direct in situ resistance measurements of Rb4C60 under high pressure up to 2 GPa, in the temperature range 90–400 K. The resistance changes smoothly with pressure and temperature without sharp anomalies, and all data sets can be fitted to the same theoretical semiconductor model. We find no signs of the insulator-to-metal transition previously reported in this range, but the fitted band gap decreases with pressure and such a transition may possibly take place above 5 GPa.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

Fullerenes

Rb4C60

resistance

resistivity

conductivity

semiconductor

band gap

high pressure

low temperature

high temperature

Condensed matter physics

Kondenserade materiens fysik

Publication and Content Type

ref (subject category)

kon (subject category)