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Numerical Parameter...
Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis
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- Rashid, S. J. (författare)
- Univ Cambridge, Dept Engn, Elect Engn Div, Cambridge CB3 0FA, England
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- Tajani, A. (författare)
- Element Six Ltd, Ascot SL5 8BP, Berks, England
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- Twitchen, D. J. (författare)
- Element Six Ltd, Ascot SL5 8BP, Berks, England
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- Coulbeck, L. (författare)
- Dynex Semicond Ltd, Lincoln LN6 3LF, England
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- Udrea, F. (författare)
- Univ Cambridge, Dept Engn, Elect Engn Div, Cambridge CB3 0FA, England;Cambridge Semicond, Cambridge CB4 1DL, England
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- Butler, T. (författare)
- Univ Cambridge, Dept Engn, Elect Engn Div, Cambridge CB3 0FA, England
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- Rupesinghe, N. L. (författare)
- Univ Cambridge, Dept Engn, Elect Engn Div, Cambridge CB3 0FA, England
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- Brezeanu, M. (författare)
- Univ Cambridge, Dept Engn, Elect Engn Div, Cambridge CB3 0FA, England
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- Isberg, Jan (författare)
- Uppsala universitet,Elektricitetslära
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- Garraway, A. (författare)
- Dynex Semicond Ltd, Lincoln LN6 3LF, England
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- Dixon, M. (författare)
- Element Six Ltd, Ascot SL5 8BP, Berks, England
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- Balmer, R. S. (författare)
- Element Six Ltd, Ascot SL5 8BP, Berks, England
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- Chamund, D. (författare)
- Dynex Semicond Ltd, Lincoln LN6 3LF, England
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- Taylor, P. (författare)
- Dynex Semicond Ltd, Lincoln LN6 3LF, England
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- Amaratunga, G. A. J. (författare)
- Univ Cambridge, Dept Engn, Elect Engn Div, Cambridge CB3 0FA, England;Cambridge Semicond, Cambridge CB4 1DL, England
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(creator_code:org_t)
- 2008
- 2008
- Engelska.
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Ingår i: IEEE Transactions on Electron Devices. - 0018-9383 .- 1557-9646. ; 55:10, s. 2744-2756
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https://uu.diva-port... (primary) (Raw object)
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- High-quality electronic-grade intrinsic chemical-vapor-deposited (CVD) single-crystal diamond layers having exceptionally high carrier mobilities have been reported by Isberg et al. This makes the realization of novel electronic devices in diamond, particularly for high-voltage and high-temperature applications, a viable proposition. As such, material models which can capture the particular features of diamond as a semiconductor are required to analyze, optimize, and quantitatively design new devices. For example, the incomplete ionization of boron in diamond and the transition to metallic conduction in heavily boron-doped layers require accurate carrier freeze-out models to be included in the simulation of diamond devices. Models describing these phenomena are proposed in this paper and include numerical approximation of intrinsic diamond which is necessary to formulate doping- and temperature-dependent mobility models. They enable a concise numerical description of single-crystal diamond which agrees with data obtained from material characterization. The models are verified by application to new Schottky m-i-p(+) diode structures in diamond. Simulated forward characteristics show excellent correlation with experimental measurements. In spite of the lack of impact ionization data for single-crystal diamond, approximation of avalanche coefficient parameters from other wide-bandgap semiconductors has also enabled the reverse blocking characteristics of diamond diodes to be simulated. Acceptable agreement with breakdown voltage from experimental devices made with presently available single-crystal CVD diamond is obtained.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Diamond
- numerical parameterisation
- Schottky diodes
- semiconductor device modeling
- Electrical engineering, electronics and photonics
- Elektroteknik, elektronik och fotonik
- Teknisk fysik med inriktning mot elektricitetslära
- Engineering Science with specialization in Science of Electricity
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Rashid, S. J.
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Tajani, A.
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Twitchen, D. J.
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Coulbeck, L.
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Udrea, F.
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Butler, T.
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visa fler...
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Rupesinghe, N. L ...
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Brezeanu, M.
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Isberg, Jan
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Garraway, A.
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Dixon, M.
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Balmer, R. S.
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Chamund, D.
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Taylor, P.
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Amaratunga, G. A ...
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Uppsala universitet