A 2 GHz oscillator using a monolithically integrated AlN TFBAR

• A 2 GHz oscillator based on a solidly mounted AlN thin-film bulk acoustic resonator (TFBAR) is reported. The oscillator is realised as a silicon-on-silicon multi-chip module (MCM) where all passive elements, including the TFBAR, are monolithically integrated on a high-resistivity silicon (HRS) carrier. SiGe transistors are flip-chip mounted on the MCM carrier. Measurements of the oscillators reveal a best phase-noise of -125 dBc/Hz at 100 kHz offset.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Ge-Si alloys

III-V semiconductors

acoustic resonators

aluminium compounds

flip-chip devices

multichip modules

oscillators

phase noise

semiconductor thin films

thin film devices

transistors

wide band gap semiconductors

AlN

AlN TFBAR

AlN thin-film bulk acoustic resonator

Si

SiGe

SiGe transistors

frequency 2 GHz

high-resistivity silicon

oscillator

silicon-on-silicon multi-chip module

Acoustic resonator

TFBAR

hybrid integration

multi-chip module

oscillator

thin film device

TECHNOLOGY

TEKNIKVETENSKAP

Publikations- och innehållstyp

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