Evaluation of Zn-Sn-O buffer layers for CuIn0.5Ga0.5Se2 solar cells

• Thin Zn-Sn-O films are evaluated as new buffer layer material for Cu(In,Ga)Se-2-based solar cell devices. A maximum conversion efficiency of 13.8% (V-oc = 691 mV, J(sc)(QE) = 27.9 mA/cm(2), and FF = 71.6%) is reached for a solar cell using the Zn-Sn-O buffer layer which is comparable to the efficiency of 13.5% (V-oc - 706 mV, J(sc)(QE) - 26.3 mA/cm(2), and FF = 72.9%) for a cell using the standard reference CdS buffer layer. The open circuit voltage (V-oc) and the fill factor (FF) are found to increase with increasing tin content until an optimum in both parameters is reached for Sn/(Zn+Sn) values around 0.3-0.4.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

Zn-Sn-O

Cu(In

Ga)Se2

buffer layer

atomic layer deposition

Semiconductor physics

Halvledarfysik

TECHNOLOGY

TEKNIKVETENSKAP

Teknisk fysik med inriktning mot fasta tillståndets fysik

Engineering Science with specialization in Solid State Physics

Engineering Science with specialization in Electronics

Teknisk fysik med inriktning mot elektronik

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