On Gate Capacitance of Nanotube Networks

• This letter presents a systematic investigation of the gate capacitance C-G of thin-film transistors (TFTs) based on randomly distributed single-walled carbon nanotubes (SWCNTs) in the channel. In order to reduce false counting of SWCNTs that do not contribute to current conduction, C-G is directly measured on the TFTs using a well-established method for MOSFETs. Frequency dispersion of C-G is observed, and it is found to depend on the percolation behavior in SWCNT networks. This dependence can be accounted for using an RC transmission line model. These results are of important implications for the determination of carrier mobility in nanoparticle-based TFTs.

Nyckelord

Frequency dependence

gate capacitance

nanotube networks

percolation

transmission line model

TECHNOLOGY

TEKNIKVETENSKAP

Engineering Science with specialization in Electronics

Teknisk fysik med inriktning mot elektronik

SRA - ICT

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