On Different Process Schemes for MOSFETs With a Controllable NiSi-Based Metallic Source/Drain

• This paper focuses on different silicidation schemes toward a controllable NiSi-based metallic source/drain (MSD) process with restricted lateral encroachment of NiSi. These schemes include thickness control of Ni, Ni-Pt alloying, and two-step annealing. Experimental results show that all the three process schemes can give rise to effective control of lateral encroachment during Ni silicidation. By controlling t(Ni), NiSi-based MSD metal-oxide-semiconductor field-effect transistors (MOSFETs) of gate length L-G = 55 nm are readily realized on ultrathin-body silicon-on-insulator substrates with 20-nm surface Si thickness. With the aid of dopant segregation (DS) to modifying the Schottky barrier heights of NiSi, both n- and p-type MSD MOSFETs show significant performance improvement, compared to reference devices without DS.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Contacts

MOSFETs

silicides

TECHNOLOGY

TEKNIKVETENSKAP

Engineering Science with specialization in Electronics

Teknisk fysik med inriktning mot elektronik

Electrical engineering, electronics and photonics

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)