Mobility Extraction for Nanotube TFTs

• An extensive investigation of carrier mobility is presented for thin-film transistors (TFTs) with single-walled carbon nanotube (SWCNT) networks as the semiconductor channel. For TFTs particularly with low-density SWCNTs in the networks, the extracted mobility using the standard method for Si metal-oxide-semiconductor field-effect transistors is erroneous, mainly resulting from use of a parallel-plate capacitor model and assumption of the source-drain current being inversely proportional to the channel length. Large hysteresis in the transfer characteristics further complicates the extraction. By properly addressing all these challenges in this letter, a comprehensive methodology is established, leading to the extraction of mobility values that are independent of geometrical parameters.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Maskinteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Mechanical Engineering (hsv//eng)

Nyckelord

Carbon nanotube network

carrier mobility

current exponent

gate capacitance

hysteresis

TECHNOLOGY

TEKNIKVETENSKAP

Engineering Science with specialization in Electronics

Teknisk fysik med inriktning mot elektronik

Engineering mechanics

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