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Gas-Pulsed CVD for ...
Gas-Pulsed CVD for Film Growth in the Cu-Ni-N System
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- Lindahl, Erik (author)
- Uppsala universitet,Oorganisk kemi
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- Ottosson, Mikael, 1962- (author)
- Uppsala universitet,Oorganisk kemi
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- Carlsson, Jan-Otto (author)
- Uppsala universitet,Oorganisk kemi
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(creator_code:org_t)
- 2012-03-16
- 2012
- English.
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In: Chemical Vapor Deposition. - : Wiley. - 0948-1907 .- 1521-3862. ; 18:1-3, s. 10-16
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- A new ternary solid solution, Cu3-xNix+yN, is prepared by gas-pulsed CVD at 260 degrees C. Gas pulses of the precursor mixtures Cu(hfac)2+NH3 and Ni(thd)2+NH3, separated by intermittent ammonia pulses, are employed for the deposition of Cu3N and Ni3N, respectively. A few monolayers of the nitrides are grown in each CVD pulse and then mixed by diffusion to produce the solid solution. The metal content of the solid solution can be varied continuously from 100% to about 20% Cu, which means that the electrical properties can be varied from 1.6eV (band gap of Cu3N) to metallic (Ni3N). This is of interest for various applications, e.g., solar energy, catalysis, and microelectronics.
Subject headings
- NATURVETENSKAP -- Kemi -- Oorganisk kemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Inorganic Chemistry (hsv//eng)
Keyword
- Cu3-xNix+yN
- Cu?Ni?N system
- Gas-pulsed CVD
- Metastable nitrides
- Kemi med inriktning mot oorganisk kemi
- Chemistry with specialization in Inorganic Chemistry
Publication and Content Type
- ref (subject category)
- art (subject category)
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