W-Band RF-MEMS Dicke Switch Networks In A GaAs MMIC Process

• A novel design of a W-band RF-microelectro-mechanical-system (RF-MEMS) Dicke switch network realized in a GaAs monolithic microwave integrated circuit process is presented in this article (including a BenzoCycloButene cap type of 0-level package used as protection during wafer dicing). Such fabricated GaAs MEMS Dicke switch circuits show transmission losses of 1.3-1.7 dB (uncapped on-wafer), 1.6-2.0 dB (uncapped chips), and 1.8-2.7 dB (0-level packaged chips) at 70-96 GHz. Corresponding measured maximum values of switch isolation equal 23, 26, and 27 dB, respectively. To the authors' knowledge, these are the first reported uncapped and wafer-level packaged W-band low loss/DC power and high isolation/linearity RF-MEMS Dicke switch circuits made in a GaAs foundry process. 

Nyckelord

Dicke switch network

Gallium Arsenide

monolithic microwave integrated circuit

radio frequency microelectro-mechanical-systems

Engineering Science with specialization in Electronics

Teknisk fysik med inriktning mot elektronik

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