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- Edholm, BengtUppsala universitet,Fasta tillståndets fysik,Fasta tillståndets elektronik (author)
Very High Current Gain Enhancement by Substrate Biasing of Lateral Bipolar Transistors on Thin SOI
- Article/chapterEnglish1993
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- Elsevier BV,1993
- printrdacarrier
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- LIBRIS-ID:oai:DiVA.org:uu-210689
- https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-210689URI
- https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-181743URI
- https://doi.org/10.1016/0167-9317(93)90192-8DOI
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- Language:English
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- Olsson, Jörgen,1966-Uppsala universitet,Fasta tillståndets elektronik(Swepub:uu)jorgolss (author)
- Söderbärg, AndersUppsala universitet,Fasta tillståndets elektronik (author)
- Uppsala universitetFasta tillståndets fysik (creator_code:org_t)
Related titles
- In:Infos: Elsevier BV22:1-4, s. 379-382
- In:Microelectronic Engineering: Elsevier BV22:1-4, s. 379-3820167-93171873-5568
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