High performance transmit/receive modules in 0.13 um SiGe:C BiCMOS for short range F-band MIMO radars

Transmit and Receive (TX/RX) F-band radar modules are presented. Both modules are implemented in a state of the art SiGe:C BiCMOS featuring high-speed HBTs with f(T)/f(max) of 300/500 GHz. The TX is based on a frequency octupler that consists of a cascade of three Gilbert cells, covering the upper F-band from 120-140 GHz and providing differential output power of up to 6 dBm, the highest values reported to date for BiCMOS. The RX uses the identical frequency octupler followed by a mixer, transformer and a differential LNA, giving altogether conversion gain of 25 dB. Both chips are packaged and connected to off-chip patch antennas using bondwire interconnects with dedicated compensation structures. Initial measurement trials proved full functionality of the realized frontend across 114-152 GHz. It has also been demonstrated that wire-bonding, when properly designed, is still an attractive solution for chip to antenna interconnects even above 110 GHz.

Spreng, T (författare)
Kaynak, M (författare)
Dancila, DragosUppsala universitet,Fasta tillståndets elektronik(Swepub:uu)drada970 (författare)
Rydberg, AndersUppsala universitet,Fasta tillståndets elektronik(Swepub:uu)anderydb (författare)
Yuan, S (författare)
Trasser, A (författare)
Schumacher, H (författare)
Uppsala universitetFasta tillståndets elektronik (creator_code:org_t)

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