Effects of carbon pre-silicidation implant into Si substrate on NiSi

• In this work, the effects of carbon pre-silicidation implant into Si(1 0 0) substrate on NiSi were investigated. NiSi films with carbon pre-silicidation implant to different doses were characterized by means of sheet resistance measurements, X-ray diffraction, scanning electron microscopy (SEM), planar view transmission electron microscopy (TEM) and second ion mass spectroscopy (SIMS). The presence of C is found to indeed significantly improve the thermal stability of NiSi as well as tends to change the preferred orientations of polycrystalline NiSi. The homogeneously distributed C at NiSi grain boundaries and C peak at NiSi/Si interface is ascribed to the improved thermal stability of NiSi. More importantly, the dose of carbon pre-silicidation implant also plays a key role in the formation of NiSi, which is suggested not to exceed a critical value about 5 x 10(15) cm(-2) in practical application in accordance with the results achieved in this work. (C) 2013 Elsevier B.V. All rights reserved.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)

NATURVETENSKAP  -- Fysik -- Atom- och molekylfysik och optik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Atom and Molecular Physics and Optics (hsv//eng)

Nyckelord

Carbon implant

Thermal stability

NiSi

Engineering Science with specialization in Electronics

Teknisk fysik med inriktning mot elektronik

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)