Graphene as a Diffusion Barrier in Galinstan-Solid Metal Contacts

• This paper presents the use of graphene as a diffusion barrier to a eutectic Ga-In-Sn alloy, i.e., galinstan, for electrical contacts in electronics. Galinstan is known to be incompatible with many conventional metals used for electrical contacts. When galinstan is in direct contact with Al thin films, Al is readily dissolved leading to the formation of Al oxides present on the surface of the galinstan droplets. This reaction is monitored ex situ using several material analysis methods as well as in situ using a simple circuit to follow the time-dependent resistance variation. In the presence of a multilayer graphene diffusion barrier, the Al-galinstan reaction is effectively prevented for galinstan deposited by means of drop casting. When deposited by spray coating, the high-impact momentum of the galinstan droplets causes damage to the multilayer graphene and the Al-galinstan reaction is observed at some defective spots. Nonetheless, the graphene barrier is likely to block the formation of Al oxides at the Al/galinstan interface leading to a stable electrical current in the test circuit.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)

Nyckelord

Engineering Science with specialization in Electronics

Teknisk fysik med inriktning mot elektronik

Teknisk fysik med inriktning mot mikrosystemteknik

Engineering Science with specialization in Microsystems Technology

Publikations- och innehållstyp

ref (ämneskategori)

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