Strain Engineering for Controlled Growth of Thin-Film FeNi L10

FeNi thin films in the L1(0) phase were successfully grown by magnetron sputtering on HF-etched Si(001) substrates on Cu/Cu100-xNix buffers. The strain of the FeNi layer, (c/a)(FeNi), was varied in a controlled manner by changing the Ni content of the Cu100-xNix buffer layer from x = 0 at.% to x = 90 at.%, which influenced the common in- plane lattice parameter of the CuNi and FeNi layers. The presence of the L1(0) phase was confirmed by resonant x-ray diffraction measurements at various positions in reciprocal space. The uniaxial magnetocrystalline anisotropy energy K-U is observed to be smaller (around 0.35 MJ m(-3)) than predicted for a perfect FeNi L1(0) sample, but it is larger than for previously studied films. No notable variation in K-U with strain state (c/a)(FeNi) is observed in the range achieved (0.99 less than or similar to (c/a)(FeNi) less than or similar to 1.02), which is in agreement with theoretical predictions.

Hase, Thomas P.A.Department of Physics, University of Warwick, Coventry, CV4 7AL, United Kingdom (författare)
Svedlindh, PeterUppsala universitet,Fasta tillståndets fysik(Swepub:uu)petesved (författare)
Johansson, ErikABB AB, Power Devices, Corporate Research, SE-721 78 Västerås, Sweden (författare)
Andersson, Gabriella,1972-Uppsala universitet,Materialfysik(Swepub:uu)gabrande (författare)
Uppsala universitetMaterialfysik (creator_code:org_t)

Av författaren/redakt...: Frisk, Andreas; Hase, Thomas P.A ...; Svedlindh, Peter; Johansson, Erik; Andersson, Gabri ...

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