Influence of CdS and ZnxSn1-xOy Buffer Layers on the Photoluminescence of Cu(In,Ga)Se2 Thin Films

Leitao, J. P.Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal.;Univ Aveiro, I3N, P-3810193 Aveiro, Portugal. (author)

In this work, an optical study by photoluminescence on the influence of different buffer layers on a Cu(In, Ga)Se2 (CIGS) thin film is presented. Chemical bath deposited CdS was compared with atomic layer deposited ZnxSn1xOy (ZnSnO). The CIGS bulk and CIGS/buffer interface in both samples are strongly influenced by fluctuating potentials, being less pronounced for the sample with the ZnSnO buffer layer. This study emphasizes the potential application of the ZnSnO semiconductor in CIGS based solar cells.

Teixeira, J. P.Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal.;Univ Aveiro, I3N, P-3810193 Aveiro, Portugal. (author)
Keller, JanUppsala universitet,Fasta tillståndets elektronik(Swepub:uu)janke498 (author)
Törndahl, Tobias,1974-Uppsala universitet,Fasta tillståndets elektronik(Swepub:uu)totor079 (author)
Sadewasser, S.Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal. (author)
Salome, P. M. P.Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal. (author)
Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal.;Univ Aveiro, I3N, P-3810193 Aveiro, Portugal.Fasta tillståndets elektronik (creator_code:org_t)

In:2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)New York : IEEE, s. 3068-30719781509027248

By the author/editor: Leitao, J. P.; Teixeira, J. P.; Keller, Jan; Törndahl, Tobias ...; Sadewasser, S.; Salome, P. M. P.

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