Secondary ion mass spectrometry as a tool to study selenium gradient in Cu2ZnSn(S,Se)4

• Secondary ion mass spectrometry (SIMS) has been utilized to study compositional gradients in compound-sputtered and annealed Cu2ZnSn(S,Se)(4) (CZTSSe). SIMS image depth profiling shows a non-uniform spatial distribution of selenium and supports a mechanism where selenization is accompanied by grain growth rather than substitution of selenium for sulfur. Furthermore, SIMS depth profiles of S and Se using O-2(+) primary ions and detecting molecular ions of the MCs+ type using Cs+ primary ions have been compared, where a linear relationship between the sulfur and selenium concentration suitable for compositional analysis is observed for concentrations with an Se/(S+Se) ratio in the range from 0.25 to 0.65. 3D image of the spatial Se distribution in a 20 x 20 mu m(2) grid measured with SIMS image depth profiling.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

Nyckelord

Cu2ZnSn(S

Se)(4)

kesterite

secondary ion mass spectrometry

Se gradient

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