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Electronic structur...
Electronic structure of the dilute magnetic semiconductor Ga1-xMnxP from hard x-ray photoelectron spectroscopy and angle-resolved photoemission
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- Keqi, A. (författare)
- Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA
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- Gehlmann, M. (författare)
- Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA;Forschungszentrum Julich, Peter Grunberg Inst PGI 6, D-52425 Julich, Germany
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- Conti, G. (författare)
- Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA
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- Nemsak, S. (författare)
- Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA;Forschungszentrum Julich, Peter Grunberg Inst PGI 6, D-52425 Julich, Germany
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- Rattanachata, A. (författare)
- Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA
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- Minar, J. (författare)
- Univ West Bohemia, New Technol Res Ctr, Plzen 30614, Czech Republic
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- Plucinski, L. (författare)
- Forschungszentrum Julich, Peter Grunberg Inst PGI 6, D-52425 Julich, Germany
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- Rault, J. E. (författare)
- Synchrotron SOLEIL, F-91192 St Aubin, France
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- Rueff, J. P. (författare)
- Synchrotron SOLEIL, F-91192 St Aubin, France
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- Scarpulla, M. (författare)
- Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA;Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA;Univ Utah, Dept Elect & Comp Engn, Salt Lake City, UT 84112 USA
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- Hategan, M. (författare)
- Univ Calif Davis, Dept Phys, Davis, CA 95616 USA
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- Pálsson, Gunnar K. (författare)
- Uppsala universitet,Materialfysik,Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA
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- Conlon, C. (författare)
- Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA
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- Eiteneer, D. (författare)
- Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA
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- Saw, A. Y. (författare)
- Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA
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- Gray, A. X. (författare)
- Temple Univ, Dept Phys, Philadelphia, PA 19122 USA
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- Kobayashi, K. (författare)
- Japan Atom Energy Agcy, 1-1-1 Kouto, Sayo, Hyogo 6795148, Japan
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- Ueda, S. (författare)
- Natl Inst Mat Sci, Synchrotron Xray Stn SPring 8, 1-1-1 Kouto, Sayo, Hyogo 6795148, Japan;NIMS, Res Ctr Adv Measurement & Characterizat, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan
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- Dubon, O. D. (författare)
- Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA;Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
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- Schneider, C. M. (författare)
- Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA;Forschungszentrum Julich, Peter Grunberg Inst PGI 6, D-52425 Julich, Germany
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- Fadley, C. S. (författare)
- Univ Calif Davis, Dept Phys, Davis, CA 95616 USA;Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA
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(creator_code:org_t)
- 2018
- 2018
- Engelska.
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Ingår i: Physical Review B. - 2469-9950 .- 2469-9969. ; 97:15
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) Ga0.98Mn0.02P and compared it to that of an undoped GaP reference sample, using hard x-ray photoelectron spectroscopy (HXPS) and hard x-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, to understand the role of the Mn dopant in the emergence of ferromagnetism in this material. Both core-level spectra and angle-resolved or angle-integrated valence spectra are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between Ga0.98Mn0.02P and GaP in both angle-resolved and angle-integrated valence spectra. The Ga0.98Mn0.02P bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host GaP crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations and a prior HARPES study of Ga0.97Mn0.03As and GaAs [Gray et al., Nat. Mater. 11, 957 (2012)], demonstrating the strong similarity between these two materials. The Mn 2p and 3s core-level spectra also reveal an essentially identical state in doping both GaAs and GaP.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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Keqi, A.
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Gehlmann, M.
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Conti, G.
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Nemsak, S.
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Rattanachata, A.
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Minar, J.
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visa fler...
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Plucinski, L.
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Rault, J. E.
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Rueff, J. P.
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Scarpulla, M.
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Hategan, M.
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Pálsson, Gunnar ...
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Conlon, C.
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Eiteneer, D.
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Saw, A. Y.
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Gray, A. X.
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Kobayashi, K.
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Ueda, S.
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Dubon, O. D.
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Schneider, C. M.
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Fadley, C. S.
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