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Neutron induced single-word multiple-bit upset in SRAM
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- Johansson, K (author)
- Uppsala universitet,Institutionen för neutronforskning
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- Ohlsson, M (author)
- Uppsala universitet,The Svedberg-laboratoriet
- Olsson, N (author)
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- Blomgren, J (author)
- Renberg, PU (author)
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- (creator_code:org_t)
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 1999
- 1999
- English.
- In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. - 0018-9499. ; 46:6, s. 1427-1433
- Journal article (other academic/artistic)
Abstract
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- The Single-word Multiple-bit Upset (SMU) frequency fbr nine commercial Static Random Access Memories (SRAM) have been evaluated at eight different neutron energies; 0; 11MeV, 14MeV, 22MeV, 35MeV, 45MeV, 75MeV, 96MeV, 160MeV. The SRAM types used at these e
Keyword
- EVENT UPSETS; GROUND-LEVEL; STATIC RAMS; FLIGHT
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- vet (subject category)
- art (subject category)
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