Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems

• The critical impurity concentration N-c of the metal-nonmetal (MNM) transition for the cubic GaN, InN and AIN systems. is calculated using the following two different criteria: vanishing of the donor binding energy and the crossing point between the energ

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characterization; doping; molecular beam epitaxy; nitrides; SEMICONDUCTORS; SI-P;BI; DEVICES; DONOR; GAAS

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