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- Hu, QitaoUppsala universitet,Fasta tillståndets elektronik (author)
Effects of Substrate Bias on Low-Frequency Noise in Lateral Bipolar Transistors Fabricated on Silicon-on-Insulator Substrate
- Article/chapterEnglish2020
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- 2020
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- LIBRIS-ID:oai:DiVA.org:uu-397212
- https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-397212URI
- https://doi.org/10.1109/LED.2019.2953362DOI
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- Summary in:English
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- This letter presents a systematic study of how the substrate bias (Vsub) modulation affects the current-voltage (I-V) characteristics and low-frequency noise (LFN) of lateral bipolar junction transistors (LBJTs) fabricated on a silicon-on-insulator(SOI) substrate. The current gain (β) of npn LBJTs at low base voltage can be greatly improved bya positive Vsub as a result of enhanced electron injection into the base near the buried oxide (BOX)/silicon interface. However, an excessive positive Vsub may also adversely affect the LFN performance by amplifying the noise generated as a result of carrier trapping and detrapping at that interface. Our results provide a practical guideline for improving both β and the overall noise performance when using our LBJT as a local signal amplifier.
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- Chen, Si,1982-Uppsala universitet,Fasta tillståndets elektronik(Swepub:uu)siach950 (author)
- Zhang, Shi-LiUppsala universitet,Fasta tillståndets elektronik(Swepub:uu)shizh725 (author)
- Solomon, PaulIBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA (author)
- Zhang, Zhen,1979-Uppsala universitet,Fasta tillståndets elektronik(Swepub:uu)zhezh386 (author)
- Uppsala universitetFasta tillståndets elektronik (creator_code:org_t)
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- In:IEEE Electron Device Letters41:1, s. 4-70741-31061558-0563
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