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Decoupling of Optical and Electrical Properties of Rear Contact CIGS Solar Cells

Cunha, Jose M., V (author)
INL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal;Univ Aveiro, Dept Fis, Campus Univ Santiago, P-3810193 Aveiro, Portugal;Univ Aveiro, I3N, Campus Univ Santiago, P-3810193 Aveiro, Portugal
Lopes, Tomas S. (author)
INL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal
Bose, Sourav (author)
Uppsala universitet,Fasta tillståndets elektronik,INL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal,Ångström Solar Center
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Hultqvist, Adam (author)
Uppsala universitet,Fasta tillståndets elektronik,Ångström Solar Center
Chen, Wei-Chao (author)
Uppsala universitet,Fasta tillståndets elektronik,Ångström Solar Center
Donzel-Gargand, Olivier (author)
Uppsala universitet,Fasta tillståndets elektronik,INL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal,Ångström Solar Center
Ribeiro, Rodrigo M. (author)
INL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal
Oliveira, Antonio J. N. (author)
INL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal
Edoff, Marika, 1965- (author)
Uppsala universitet,Fasta tillståndets elektronik,Ångström Solar Center
Fernandes, Paulo A. (author)
INL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal;Univ Aveiro, I3N, Campus Univ Santiago, P-3810193 Aveiro, Portugal;Inst Politecn Porto, Inst Super Engn Porto, Dept Fis, CIETI, P-4200072 Porto, Portugal
Salome, Pedro M. P. (author)
INL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal;Univ Aveiro, Dept Fis, Campus Univ Santiago, P-3810193 Aveiro, Portugal
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 (creator_code:org_t)
Institute of Electrical and Electronics Engineers (IEEE), 2019
2019
English.
In: IEEE Journal of Photovoltaics. - : Institute of Electrical and Electronics Engineers (IEEE). - 2156-3381 .- 2156-3403. ; 9:6, s. 1857-1862
  • Journal article (peer-reviewed)
Abstract Subject headings
Close  
  • A novel architecture that comprises rear interface passivation and increased rear optical reflection is presented with the following advantages: i) enhanced optical reflection is achieved by the deposition of a metallic layer over the Mo rear contact; ii) improved interface qualitywithCIGS by adding a sputteredAl 2O 3 layer over the metallic layer; and, iii) optimal ohmic electrical contact ensured by rear-openings refilling with a second layer of Mo as generally observed from the growth of CIGS on Mo. Hence, a decoupling between the electrical function and the optical purpose of the rear substrate is achieved. We present in detail the manufacturing procedure of such type of architecture together with its benefits and caveats. A preliminary analysis showing an architecture proof-of-concept is presented and discussed.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

Cu(In
Ga)Se 2 (CIGS)
passivation
semiconductors
ultrathin

Publication and Content Type

ref (subject category)
art (subject category)

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