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High-temperature de...
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Marquez, Jose A.Helmholtz Zentrum Berlin Mat & Energie GmbH, Hahn Meitner Pl 1, D-14109 Berlin, Germany.
(author)
High-temperature decomposition of Cu2BaSnS4 with Sn loss reveals newly identified compound Cu2Ba3Sn2S8
- Article/chapterEnglish2020
Publisher, publication year, extent ...
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2020
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Royal Society of Chemistry (RSC),2020
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Numbers
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LIBRIS-ID:oai:DiVA.org:uu-418953
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https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-418953URI
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https://doi.org/10.1039/d0ta02348eDOI
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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The earth-abundant quaternary compound Cu(2)BaSnS(4)is being currently studied as a candidate for photovoltaics and as a photocathode for water splitting. However, the chemical stability of this phase during synthesis is unclear. The synthesis of other quaternary tin-sulphur-based absorbers (e.g., Cu2ZnSnS4) involves an annealing step at high temperature under sulphur gas atmosphere, which can lead to decomposition into secondary phases involving Sn loss from the sample. As the presence of secondary phases can be detrimental for device performance, it is crucial to identify secondary phase chemical, structural and optoelectronic properties. Here we used a combination ofin situEDXRD/XRF and TEM to identify a decomposition pathway for Cu2BaSnS4. Our study reveals that, while Cu(2)BaSnS(4)remains stable at high sulphur partial pressure, the material decomposes at high temperatures into Cu(4)BaS(3)and the hitherto unknown compound Cu(2)Ba(3)Sn(2)S(8)if the synthesis is performed under low partial pressure of sulphur. The presence of Cu(4)BaS(3)in devices could be harmful due to its high conductivity and relatively lower band gap compared to Cu2BaSnS4. The analysis of powder diffraction data reveals that the newly identified compound Cu(2)Ba(3)Sn(2)S(8)crystallizes in the cubic system (space groupI4x304;3d) with a lattice parameter ofa= 14.53(1) angstrom. A yellow powder of Cu(2)Ba(3)Sn(2)S(8)has been synthesized, exhibiting an absorption onset at 2.19 eV.
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Sun, Jon-PaulDuke Univ, Dept Mech Engn & Mat Sci, Durham, NC 27708 USA.
(author)
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Stange, HelenaHelmholtz Zentrum Berlin Mat & Energie GmbH, Hahn Meitner Pl 1, D-14109 Berlin, Germany.
(author)
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Ali, Hasan,1985-Uppsala universitet,Tillämpad materialvetenskap(Swepub:uu)hasal635
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Choubrac, LeoHelmholtz Zentrum Berlin Mat & Energie GmbH, Hahn Meitner Pl 1, D-14109 Berlin, Germany.
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Schaefer, StefanHelmholtz Zentrum Berlin Mat & Energie GmbH, Hahn Meitner Pl 1, D-14109 Berlin, Germany.
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Hages, Charles J.Helmholtz Zentrum Berlin Mat & Energie GmbH, Hahn Meitner Pl 1, D-14109 Berlin, Germany.;Univ Florida, Dept Chem Engn, 1006 Ctr Dr, Gainesville, FL 32611 USA.
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Leifer, Klaus,1965-Uppsala universitet,Tillämpad materialvetenskap(Swepub:uu)kllei839
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Unold, ThomasHelmholtz Zentrum Berlin Mat & Energie GmbH, Hahn Meitner Pl 1, D-14109 Berlin, Germany.
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Mitzi, David B.Duke Univ, Dept Mech Engn & Mat Sci, Durham, NC 27708 USA.;Duke Univ, Dept Chem, Durham, NC 27708 USA.
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Mainz, RolandHelmholtz Zentrum Berlin Mat & Energie GmbH, Hahn Meitner Pl 1, D-14109 Berlin, Germany.
(author)
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Helmholtz Zentrum Berlin Mat & Energie GmbH, Hahn Meitner Pl 1, D-14109 Berlin, Germany.Duke Univ, Dept Mech Engn & Mat Sci, Durham, NC 27708 USA.
(creator_code:org_t)
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In:Journal of Materials Chemistry A: Royal Society of Chemistry (RSC)8:22, s. 11346-113532050-74882050-7496
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Marquez, Jose A.
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Sun, Jon-Paul
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Stange, Helena
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Choubrac, Leo
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Schaefer, Stefan
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Unold, Thomas
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