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Optimization of Back Contact Grid Size in Al2O3-Rear-Passivated Ultrathin CIGS PV Cells by 2-D Simulations

Lontchi, Jackson (author)
Catholic Univ Louvain, ICTEAM Inst, B-1348 Louvain La Neuve, Belgium
Zhukova, Maria (author)
Catholic Univ Louvain, ICTEAM Inst, B-1348 Louvain La Neuve, Belgium
Kovacic, Milan (author)
Univ Ljubljana, Fac Elect Engn, Ljubljana 1000, Slovenia
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Krc, Janez (author)
Univ Ljubljana, Fac Elect Engn, Ljubljana 1000, Slovenia
Chen, Wei-Chao (author)
Uppsala universitet,Solcellsteknik
Edoff, Marika, 1965- (author)
Uppsala universitet,Solcellsteknik
Bose, Sourav (author)
Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal
Salomé, Pedro M. P. (author)
Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal
Goffard, Julie (author)
Univ Paris Sud Paris Saclay, Ctr Nanosci & Nanotechnol, F-91120 Palaiseau, France
Cattoni, Andrea (author)
Univ Paris Sud Paris Saclay, Ctr Nanosci & Nanotechnol, F-91120 Palaiseau, France
Gouillart, L. (author)
Univ Paris Sud Paris Saclay, Ctr Nanosci & Nanotechnol, F-91120 Palaiseau, France
Collin, Stephane (author)
Univ Paris Sud Paris Saclay, Ctr Nanosci & Nanotechnol, F-91120 Palaiseau, France
Gusak, Viktoria (author)
Solibro Res AB, S-75651 Uppsala, Sweden
Flandre, Denis (author)
Catholic Univ Louvain, ICTEAM Inst, B-1348 Louvain La Neuve, Belgium
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 (creator_code:org_t)
2020
2020
English.
In: IEEE Journal of Photovoltaics. - 2156-3381 .- 2156-3403. ; 10:6, s. 1908-1917
  • Journal article (peer-reviewed)
Abstract Subject headings
Close  
  • We present a simulation strategy using ATLAS-2D to optimize the back-contact hole grid (i.e., size and pitch of openings) of the Al 2 O 3 -rear-passivation layer in ultrathin Cu(In,Ga)Se 2 photovoltaic cells. We first discuss and compare our simulation model with a series of experimental nonpassivated and passivated cells to decouple the crucial passivation parameters. The simulation results follow the experimental trends, highlighting the beneficial effects of the passivation on the cell performances. Furthermore, it stresses the influence of the passivation quality at the Al 2 O 3 /Cu(In,Ga)Se 2 (CIGS) interface and of the contact resistance at the Mo/CIGS interface within the openings. Further simulations quantify significant improvements in short-circuit current and open-circuit voltage for different sizes of openings in the Al 2 O 3 layer, relative to an excellent passivation quality (i.e., high density of negative charges in the passivation layer). However, a degradation is predicted for a poor passivation (i.e., low density of such charges) or a high contact resistance. Consequently, we point out an optimum in efficiency when varying the opening widths at fixed hole-pitch and fixed contact resistance. At equivalent contact resistance, simulations predict that the sizes of the pitch and openings can be increased without optimal performance losses when maintaining a width to pitch ratio around 0.2. This simulation trends have been confirmed by a series of experiments, indicating that it is crucial to care about the dimensions of the opening grid and the contact resistance of passivated cells. These simulation results provide significant insights for optimal cell design and characterizations of passivated UT-CIGS PV cells.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

2-D modeling
Al2O3 passivation
electrical characterization
opening/pitch
ultrathin Cu(In
Ga)Se-2 (CIGS PV) cells

Publication and Content Type

ref (subject category)
art (subject category)

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