Front passivation of Cu(In,Ga)Se-2 solar cells using Al2O3: Culprits and benefits

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Front passivation of Cu(In,Ga)Se-2 solar cells using Al2O3 : Culprits and benefits

Curado, M. A. (författare): INL, Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Univ Coimbra, CFisUC, Dept Phys, P-3004516 Coimbra, Portugal.

Teixeira, J. P. (författare): INL, Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.

Monteiro, M. (författare): INL, Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Univ Nova Lisboa, Dept Fis, Fac Ciencias & Tecnol, Campus Caparica, P-2829516 Caparica, Portugal.

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Ribeiro, E. F. M. (författare): Univ Coimbra, CFisUC, Dept Phys, P-3004516 Coimbra, Portugal.

Vilao, R. C. (författare): Univ Coimbra, CFisUC, Dept Phys, P-3004516 Coimbra, Portugal.

Alberto, H. V. (författare): Univ Coimbra, CFisUC, Dept Phys, P-3004516 Coimbra, Portugal.

Cunha, J. M. V. (författare): INL, Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Univ Aveiro, Dept Fis, Campus Univ Santiago, P-3810193 Aveiro, Portugal.;Univ Aveiro, i3N, Campus Univ Santiago, P-3810193 Aveiro, Portugal.

Lopes, T. S. (författare): INL, Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium.;IMOMEC, Imec Div, Wetenschapspk 1, B-3590 Diepenbeek, Belgium.;EnergyVille 2,Thor Pk 8320, B-3600 Genk, Belgium.

Oliveira, K. (författare): INL, Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.

Donzel-Gargand, Olivier (författare): Uppsala universitet,Solcellsteknik,INL, Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.

Hultqvist, Adam (författare): Uppsala universitet,Solcellsteknik

Calderon, S. (författare): INL, Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.

Barreiros, M. A. (författare): Lab Nacl Energia & Geol, Estr Paco Lumiar 22, Lisbon, Portugal.

Chiappim, W. (författare): Univ Aveiro, Dept Fis, Campus Univ Santiago, P-3810193 Aveiro, Portugal.;Univ Aveiro, i3N, Campus Univ Santiago, P-3810193 Aveiro, Portugal.

Leitao, J. P. (författare): Univ Aveiro, Dept Fis, Campus Univ Santiago, P-3810193 Aveiro, Portugal.;Univ Aveiro, i3N, Campus Univ Santiago, P-3810193 Aveiro, Portugal.

Silva, A. G. (författare)

Prokscha, T. (författare): Paul Scherrer Inst, Lab Muon Spin Spect, CH-5232 Villigen, Switzerland.

Vinhais, C. (författare): INL, Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Inst Politecn Porto, CIETI, Dept Fis, Inst Super Engn Porto, P-4200072 Porto, Portugal.

Fernandes, P. A. (författare): INL, Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Univ Aveiro, i3N, Campus Univ Santiago, P-3810193 Aveiro, Portugal.;Inst Politecn Porto, CIETI, Dept Fis, Inst Super Engn Porto, P-4200072 Porto, Portugal.

Salome, P. M. P. (författare): INL, Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Univ Aveiro, Dept Fis, Campus Univ Santiago, P-3810193 Aveiro, Portugal.

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INL, Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal;Univ Coimbra, CFisUC, Dept Phys, P-3004516 Coimbra, Portugal. INL, Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal. (creator_code:org_t)

ELSEVIER, 2020
2020
Engelska.
Ingår i: APPLIED MATERIALS TODAY. - : ELSEVIER. - 2352-9407. ; 21

Relaterad länk:: https://recipp.ipp.p...; visa fler...; https://urn.kb.se/re...; https://doi.org/10.1...; visa färre...

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In the past years, the strategies used to break the Cu(In,Ga)Se-2 (CIGS) light to power conversion efficiency world record value were based on improvements of the absorber optoelectronic and crystalline properties, mainly using complex post-deposition treatments. To reach even higher efficiency values, further advances in the solar cell architecture are needed, in particular, with respect to the CIGS interfaces. In this study, we evaluate the structural, morphological and optoelectronic impact of an Al2O3 layer as a potential front passivation layer on the CIGS properties, as well as an Al2O3 tunneling layer between CIGS and CdS. Morphological and structural analyses reveal that the use of Al2O3 alone is not detrimental to CIGS, although it does not resist to the CdS chemical bath deposition. The CIGS optoelectronic properties degrade when the CdS is deposited on top of Al2O3. Nonetheless, when Al2O3 is used alone, the optoelectronic measurements reveal a positive impact of this inclusion such as a very low concentration of interface defects while keeping the same CIGS recombination channels. Thus, we suggest that an Al2O3 front passivation layer can be successfully used with alternative buffer layers. Depth-resolved microscopic analysis of the CIGS interface with slow-muons strongly suggests for the first time that low-energy muon spin spectroscopy (LE-mu SR) is sensitive to both charge carrier separation and bulk recombination in complex semiconductors. The demonstration that Al2O3 has the potential to be used as a front passivation layer is of significant importance, considering that Al2O3 has been widely studied as rear interface passivation material. (C) 2020 Published by Elsevier Ltd.

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Front passivation of Cu(In,Ga)Se-2 solar cells using Al2O3 : Culprits and benefits

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