Search: id:"swepub:oai:DiVA.org:uu-447931" >
Rational Passivatio...
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Bretscher, HopeUniv Cambridge, Cambridge CB2 1TN, England.
(author)
Rational Passivation of Sulfur Vacancy Defects in Two-Dimensional Transition Metal Dichalcogenides
- Article/chapterEnglish2021
Publisher, publication year, extent ...
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2021-05-13
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American Chemical Society (ACS),2021
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electronicrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:uu-447931
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https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-447931URI
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https://doi.org/10.1021/acsnano.1c01220DOI
Supplementary language notes
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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Structural defects vary the optoelectronic properties of monolayer transition metal dichalcogenides, leading to concerted efforts to control defect type and density via materials growth or postgrowth passivation. Here, we explore a simple chemical treatment that allows on-off switching of low-lying, defect-localized exciton states, leading to tunable emission properties. Using steady-state and ultrafast optical spectroscopy, supported by ab initio calculations, we show that passivation of sulfur vacancy defects, which act as exciton traps in monolayer MoS2 and WS2, allows for controllable and improved mobilities and an increase in photoluminescence up to 275-fold, more than twice the value achieved by other chemical treatments. Our findings suggest a route for simple and rational defect engineering strategies for tunable and switchable electronic and excitonic properties through passivation.
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Added entries (persons, corporate bodies, meetings, titles ...)
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Li, ZhaojunUppsala universitet,Energimaterialens fysik,Univ Cambridge, Cambridge CB2 1TN, England(Swepub:uu)zhali201
(author)
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Xiao, JamesUniv Cambridge, Cambridge CB2 1TN, England.
(author)
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Qiu, Diana YuanYale Univ, New Haven, CT 06520 USA.
(author)
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Refaely-Abramson, SivanWeizmann Inst Sci, IL-76100 Rehovot, Israel.
(author)
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Alexander-Webber, Jack A.Univ Cambridge, Cambridge CB2 1TN, England.
(author)
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Tanoh, AreloUniv Cambridge, Cambridge CB2 1TN, England.
(author)
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Fan, YeUniv Cambridge, Cambridge CB2 1TN, England.
(author)
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Delport, GeraudUniv Cambridge, Cambridge CB2 1TN, England.
(author)
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Williams, Cyan A.Univ Cambridge, Cambridge CB2 1TN, England.
(author)
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Stranks, Samuel D.Univ Cambridge, Cambridge CB2 1TN, England.
(author)
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Hofmann, StephanUniv Cambridge, Cambridge CB2 1TN, England.
(author)
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Neaton, Jeffrey B.Univ Calif Berkeley, Berkeley, CA 94720 USA.;Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA.
(author)
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Louie, Steven G.Univ Calif Berkeley, Berkeley, CA 94720 USA.;Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA.
(author)
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Rao, AkshayUniv Cambridge, Cambridge CB2 1TN, England.
(author)
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Univ Cambridge, Cambridge CB2 1TN, England.Energimaterialens fysik
(creator_code:org_t)
Related titles
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In:ACS Nano: American Chemical Society (ACS)15:5, s. 8780-87891936-08511936-086X
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Bretscher, Hope
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Li, Zhaojun
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Xiao, James
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Qiu, Diana Yuan
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Refaely-Abramson ...
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Alexander-Webber ...
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Tanoh, Arelo
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Fan, Ye
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Delport, Geraud
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Williams, Cyan A ...
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Stranks, Samuel ...
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Hofmann, Stephan
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Neaton, Jeffrey ...
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Louie, Steven G.
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Rao, Akshay
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NATURAL SCIENCES
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ACS Nano
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Uppsala University