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Room-Temperature-Gr...
Room-Temperature-Grown amorphous Indium-Tin-Silicon-Oxide thin film as a new electron transporting layer for perovskite solar cells
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- Jeong, Heesu (författare)
- Kyungpook Natl Univ, Sch Mat Sci & Engn, Daegu 41566, South Korea.
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- Han, Jeong Woo (författare)
- Kyungpook Natl Univ, Sch Mat Sci & Engn, Daegu 41566, South Korea.
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- Baek, Seungtae (författare)
- Kyungpook Natl Univ, Sch Mat Sci & Engn, Daegu 41566, South Korea.
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- Kim, Sang Hyub (författare)
- Kyungpook Natl Univ, Sch Mat Sci & Engn, Daegu 41566, South Korea.
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- Lee, Minho (författare)
- Kyungpook Natl Univ, Sch Mat Sci & Engn, Daegu 41566, South Korea.
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- Yun, Yeonghun (författare)
- Kyungpook Natl Univ, Sch Mat Sci & Engn, Daegu 41566, South Korea.
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- Kim, Byeong Jo (författare)
- Uppsala universitet,Fysikalisk kemi
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- Jo, Hyunil (författare)
- Kyungpook Natl Univ, Sch Mat Sci & Engn, Daegu 41566, South Korea.
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- Jung, Hyun Suk (författare)
- Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon, South Korea.
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- Park, Ik Jae (författare)
- Sookmyung Womens Univ, Dept Appl Phys, Seoul 04310, South Korea.
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- Heo, Yeong-Woo (författare)
- Kyungpook Natl Univ, Sch Mat Sci & Engn, Daegu 41566, South Korea.
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- Lee, Sangwook (författare)
- Kyungpook Natl Univ, Sch Mat Sci & Engn, Daegu 41566, South Korea.
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Kyungpook Natl Univ, Sch Mat Sci & Engn, Daegu 41566, South Korea Fysikalisk kemi (creator_code:org_t)
- Elsevier, 2022
- 2022
- Engelska.
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Ingår i: Applied Surface Science. - : Elsevier. - 0169-4332 .- 1873-5584. ; 581
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We report the amorphous quaternary oxide, indium-tin-silicon-oxide (ITSO), thin film as a new electron transport layer (ETL) for perovskite solar cells (PSCs). ITSO thin films are grown by magnetron co-sputtering indium-tin-oxide (ITO) and silicon oxide (SiO2) on commercial transparent conducting oxide (TCO) thin films at room temperature. As Si content increases (0-53.8 at%) the optical bandgap increases by approximately 1.3 eV and the electrical resistivity increases by six orders mainly because of the carrier concentration decrease. Consequently, the ITSO electronic structure depends largely on Si content. PSCs employing ITSO thin films as ETLs were fabricated to evaluate the effect of Si content on device performances. Si content influenced the shunt and series resistance. The optimized device was obtained using an ITSO film with 33.0 at% Si content, exhibiting 14.50% power-conversion efficiency. These results demonstrate that ITSO films are promising for developing efficient PSCs by optimizing the growing process and/or In/Sn/Si/O compositions. This approach can reduce PSC manufacturing process time and costs if ITO and ITSO are grown together by continuous sequential sputtering in a dual gun (ITO and SiO2) chamber.
Ämnesord
- NATURVETENSKAP -- Kemi -- Materialkemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Materials Chemistry (hsv//eng)
Nyckelord
- Indium-tin-silicon-oxides
- Low-temperature processes
- Amorphous inorganic materials
- Perovskite solar cells
- Electron transport layers
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- art (ämneskategori)
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Jeong, Heesu
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Han, Jeong Woo
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Baek, Seungtae
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Kim, Sang Hyub
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Lee, Minho
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Yun, Yeonghun
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Kim, Byeong Jo
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Jo, Hyunil
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Jung, Hyun Suk
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Park, Ik Jae
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Heo, Yeong-Woo
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Lee, Sangwook
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Applied Surface ...
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Uppsala universitet