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Wafer-sized WS2 monolayer deposition by sputtering

Villamayor, Michelle Marie S. (author)
Uppsala universitet,Fasta tillståndets elektronik
Husain, Sajid (author)
Uppsala universitet,Fasta tillståndets fysik,Univ Paris Saclay, Unite Mixte Phys, Thales, CNRS, F-91767 Palaiseau, France.
Oropesa-Nuñez, Reinier (author)
Uppsala universitet,Fasta tillståndets fysik
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Johansson, Fredrik (author)
Uppsala universitet,Institutionen för fysik och astronomi
Lindblad, Rebecka, Dr, 1984- (author)
Uppsala universitet,Fysikalisk kemi,Oorganisk kemi
Lourenco, Pedro (author)
Sorbonne Univ, Inst NanoSci Paris, INSP, CNRS, F-75005 Paris, France.
Bernard, Romain (author)
Sorbonne Univ, Inst NanoSci Paris, INSP, CNRS, F-75005 Paris, France.
Witkowski, Nadine (author)
Sorbonne Univ, Inst NanoSci Paris, INSP, CNRS, F-75005 Paris, France.
Prevot, Geoffroy (author)
Sorbonne Univ, Inst NanoSci Paris, INSP, CNRS, F-75005 Paris, France.
Sorgenfrei, Nomi L. A. N. (author)
Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Methods & Instrumentat Synchrotron Radiat Re, Albert Einstein Str 15, D-12489 Berlin, Germany.;Univ Potsdam, Inst Phys & Astron, Karl Liebknecht Str 24-25, D-14476 Potsdam, Germany.
Giangrisostomi, Erika (author)
Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Methods & Instrumentat Synchrotron Radiat Re, Albert Einstein Str 15, D-12489 Berlin, Germany.
Foehlisch, Alexander (author)
Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Methods & Instrumentat Synchrotron Radiat Re, Albert Einstein Str 15, D-12489 Berlin, Germany.;Univ Potsdam, Inst Phys & Astron, Karl Liebknecht Str 24-25, D-14476 Potsdam, Germany.
Svedlindh, Peter (author)
Uppsala universitet,Fasta tillståndets fysik
Lindblad, Andreas (author)
Uppsala universitet,Energimaterialens fysik
Nyberg, Tomas (author)
Uppsala universitet,Fasta tillståndets elektronik
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 (creator_code:org_t)
2022
2022
English.
In: Nanoscale. - : Royal Society of Chemistry (RSC). - 2040-3364 .- 2040-3372. ; 14:17, s. 6331-6338
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  • Journal article (peer-reviewed)
Abstract Subject headings
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  • We demonstrate that tungsten disulphide (WS2) with thicknesses ranging from monolayer (ML) to several monolayers can be grown on SiO2/Si, Si, and Al2O3 by pulsed direct current-sputtering. The presence of high quality monolayer and multilayered WS2 on the substrates is confirmed by Raman spectroscopy since the peak separations between the A(1g)-E-2g and A(1g)-2LA vibration modes exhibit a gradual increase depending on the number of layers. X-ray diffraction confirms a textured (001) growth of WS2 films. The surface roughness measured with atomic force microscopy is between 1.5 and 3 angstrom for the ML films. The chemical composition WSx (x = 2.03 +/- 0.05) was determined from X-ray Photoelectron Spectroscopy. Transmission electron microscopy was performed on a multilayer film to show the 2D layered structure. A unique method for growing 2D layers directly by sputtering opens up the way for designing 2D materials and batch production of high-uniformity and high-quality (stochiometric, large grain sizes, flatness) WS2 films, which will advance their practical applications in various fields.

Subject headings

NATURVETENSKAP  -- Kemi -- Materialkemi (hsv//swe)
NATURAL SCIENCES  -- Chemical Sciences -- Materials Chemistry (hsv//eng)

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