SiO$_x$ Patterned Based Substrates Implemented in Cu(In,Ga)Se$_2$ Ultrathin Solar Cells: Optimum Thickness

Oliveira, KevinINL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal. (författare)

SiO$_x$ Patterned Based Substrates Implemented in Cu(In,Ga)Se$_2$ Ultrathin Solar Cells : Optimum Thickness

Interface recombination in sub-mu m optoelectronics has a major detrimental impact on devices' performance, showing the need for tailored passivation strategies to reach a technological boost. In this article, SiO$_x$ passivation based substrates were developed and integrated into ultrathin Cu(In,Ga)Se$_2$ (CIGS) solar cells. This article aims to understand the impact of a passivation strategy, which uses several SiO$_x$ layer thicknesses (3, 8, and 25 nm) integrated into high-performance substrates (HPS). The experimental study is complemented with 3-D lumerical finite-difference time-domain and 2-D Silvaco ATLAS optical and electrical simulations, respectively, to perform a decoupling of optical and electronic gains, allowing for a deep discussion on the impact of the SiO$_x$ layer thickness in the CIGS solar cell performance. This article shows that as the passivation layer thickness increases, a rise in parasitic losses is observed. Hence, a balance between beneficial passivation and optical effects with harmful architectural constraints defines a threshold thickness to attain the best solar cell performance. Analyzing their electrical parameters, the 8-nm novel SiO$_x$ based substrate achieved a light to power conversion efficiency value of 13.2%, a 1.3% absolute improvement over the conventional Mo substrate (without SiO$_x$).

Teixeira, Jennifer P.INL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal. (författare)
Chen, Wei-ChaoUppsala universitet,Solcellsteknik(Swepub:uu)chewe640 (författare)
Jioleo, Jackson LontchiUCLouvain, ICTEAM Inst, B-1348 Louvain La Neuve, Belgium. (författare)
Oliveira, Antonio J. N.INL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal.;Univ Aveiro, I3N, P-3810193 Aveiro, Portugal. (författare)
Caha, IhsanINL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal. (författare)
Francis, Leonard DeepakINL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal. (författare)
Flandre, DenisUCLouvain, ICTEAM Inst, B-1348 Louvain La Neuve, Belgium. (författare)
Edoff, Marika,1965-Uppsala universitet,Solcellsteknik,Fasta tillståndets elektronik(Swepub:uu)maribode (författare)
Fernandes, Paulo A.INL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Univ Aveiro, I3N, P-3810193 Aveiro, Portugal.;Inst Politecn Porto, Inst Super Engn Porto, Dept Fis, CIETI, P-4200072 Porto, Portugal. (författare)
Salome, Pedro M. P.INL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal. (författare)
INL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.Solcellsteknik (creator_code:org_t)

Ingår i:IEEE Journal of Photovoltaics: Institute of Electrical and Electronics Engineers (IEEE)12:4, s. 954-9612156-33812156-3403

Av författaren/redakt...: Oliveira, Kevin; Teixeira, Jennif ...; Chen, Wei-Chao; Jioleo, Jackson ...; Oliveira, Antoni ...; Caha, Ihsan; visa fler...; Francis, Leonard ...; Flandre, Denis; Edoff, Marika, 1 ...; Fernandes, Paulo ...; Salome, Pedro M. ...; visa färre...

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