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Characterization of the Interfacial Defect Layer in Chalcopyrite Solar Cells by Depth-Resolved Muon Spin Spectroscopy

Alberto, Helena, V (författare)
Univ Coimbra, Dept Phys, CFisUC, P-3004516 Coimbra, Portugal.
Vilao, Rui C. (författare)
Univ Coimbra, Dept Phys, CFisUC, P-3004516 Coimbra, Portugal.
Ribeiro, Eduardo F. M. (författare)
Univ Coimbra, Dept Phys, CFisUC, P-3004516 Coimbra, Portugal.
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Gil, Joao M. (författare)
Univ Coimbra, Dept Phys, CFisUC, P-3004516 Coimbra, Portugal.
Curado, Marco A. (författare)
Univ Coimbra, Dept Phys, CFisUC, P-3004516 Coimbra, Portugal.;Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.
Teixeira, Jennifer P. (författare)
Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Univ Aveiro, Dept Fis, Campus Univ Santiago, P-3810193 Aveiro, Portugal.;Inst Pol Porto, Inst Sup Eng Porto, Dept Fis, CIETI, P-4200072 Porto, Portugal.
Fernandes, Paulo A. (författare)
Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Univ Aveiro, Dept Fis, Campus Univ Santiago, P-3810193 Aveiro, Portugal.;Inst Pol Porto, Inst Sup Eng Porto, Dept Fis, CIETI, P-4200072 Porto, Portugal.
Cunha, Jose M., V (författare)
Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Univ Aveiro, Dept Fis, Campus Univ Santiago, P-3810193 Aveiro, Portugal.
Salome, Pedro M. P. (författare)
Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Univ Aveiro, Dept Fis, Campus Univ Santiago, P-3810193 Aveiro, Portugal.
Edoff, Marika, 1965- (författare)
Uppsala universitet,Fasta tillståndets elektronik
Martins, Maria, I (författare)
Swiss Fed Inst Technol, Adv Power Semicond Lab, CH-8092 Zurich, Switzerland.;Paul Scherrer Inst, Lab Muon Spin Spect, CH-5232 Villigen, Switzerland.
Prokscha, Thomas (författare)
Paul Scherrer Inst, Lab Muon Spin Spect, CH-5232 Villigen, Switzerland.
Salman, Zaher (författare)
Paul Scherrer Inst, Lab Muon Spin Spect, CH-5232 Villigen, Switzerland.
Weidinger, Alois (författare)
Helmholtz Zentrum Berlin Mat & Energie, Dept ASPIN, D-14109 Berlin, Germany.
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Univ Coimbra, Dept Phys, CFisUC, P-3004516 Coimbra, Portugal Univ Coimbra, Dept Phys, CFisUC, P-3004516 Coimbra, Portugal.;Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal. (creator_code:org_t)
2022-06-07
2022
Engelska.
Ingår i: Advanced Materials Interfaces. - : John Wiley & Sons. - 2196-7350. ; 9:19
  • Tidskriftsartikel (refereegranskat)
Abstract Ämnesord
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  • As devices become smaller and more complex, the interfaces between adjacent materials become increasingly important and are often critical to device performance. An important research goal is to improve the interface between the absorber and the window layer by inserting buffer layers to adjust the transition. Depth-resolved studies are key for a fundamental understanding of the interface. In the present experiment, the interface between the chalcopyrite Cu(In,Ga)Se-2 absorber and various buffer layers are investigated using low-energy muon spin rotation (mu SR) spectroscopy. Depth resolution in the nm range is achieved by implanting the muons with different energies so that they stop at different depths in the sample. Near the interface, a region about 50 nm wide is detected where the lattice is more distorted than further inside the absorber. The distortion is attributed to the long-range strain field caused by defects. These measurements allow a quantification of the corresponding passivation effect of the buffer layer. Bath-deposited cadmium sulfide provides the best defect passivation in the near interface region, in contrast to the dry-deposited oxides, which have a much smaller effect. The experiment demonstrates the great potential of low energy mu SR spectroscopy for microscopic interfacial studies of multilayer systems.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

chalcopyrite solar cells
defect layer
passivation effect

Publikations- och innehållstyp

ref (ämneskategori)
art (ämneskategori)

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