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Characterisation of...
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Galvin, TomM&I Mat Ltd, Manchester M32 0ZD, England.
(författare)
Characterisation of SiC Varistor Quench Protection Operating at 4 Kelvin for Use With Superconducting Magnets
- Artikel/kapitelEngelska2023
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IEEE,2023
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LIBRIS-ID:oai:DiVA.org:uu-499922
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https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-499922URI
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https://doi.org/10.1109/TASC.2023.3247995DOI
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Språk:engelska
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Sammanfattning på:engelska
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Silicon carbide (SiC) composite high-energy varistors have been demonstrated as a viable alternative to linear resistors as energy extraction devices during an abrupt loss of superconductivity in a magnet, called a quench. These have typically been installed external to the cryostat at ambient temperatures, but for some superconducting magnets it may be beneficial to mount the varistors within the cryostat in vacuum, a gaseous environment, or submerged in liquid cryogens. Varistors are semiconductors and therefore exhibit a temperature-dependent voltage-current relationship, so characterising their behaviour at low temperatures is important to predict their energy extraction behaviour. In this paper we present characterisation data of SiC varistor devices from 4-300 K: voltage-current characteristics, thermal conductivity, specific heat capacity, thermal expansion, and flexural strength. These varistors are a candidate for protection at 1.9 K of the MCBY magnets, currently being built at Uppsala University for CERN.
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Kirby, GlynCERN, CH-1211 Geneva, Switzerland.
(författare)
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Pepitone, Kevin,Dr,1988-Uppsala universitet,FREIA(Swepub:uu)kevpe345
(författare)
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Coll, DominicM&I Mat Ltd, Manchester M32 0ZD, England.
(författare)
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Twin, AndrewOxford Instruments, Abingdon OX13 5QX, England.
(författare)
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Warren, DavidOxford Instruments, Abingdon OX13 5QX, England.
(författare)
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Ball, StevenOxford Instruments, Abingdon OX13 5QX, England.
(författare)
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M&I Mat Ltd, Manchester M32 0ZD, England.CERN, CH-1211 Geneva, Switzerland.
(creator_code:org_t)
Sammanhörande titlar
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Ingår i:IEEE transactions on applied superconductivity (Print): IEEE33:51051-82231558-2515
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