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Hydrothermally grown SnS2/Si nanowire core-shell heterostructure photodetector with excellent optoelectronic performances

Das, Sourav (author)
Indian Inst Technol Kharagpur, Sch Nanosci & Technol, Kharagpur 721302, India.
Pal, Sourabh (author)
Indian Inst Technol Kharagpur, Adv Technol & Dev Ctr, Kharagpur 721302, India.
Larsson, Karin, 1955- (author)
Uppsala universitet,Oorganisk kemi
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Mandal, Debabrata (author)
Indian Inst Technol Kharagpur, Sch Nanosci & Technol, Kharagpur 721302, India.
Giri, Soumen (author)
Indian Inst Technol Kharagpur, Mat Sci Ctr, Kharagpur 721302, India.
Banerji, Pallab (author)
Indian Inst Technol Kharagpur, Sch Nanosci & Technol, Kharagpur 721302, India.;Indian Inst Technol Kharagpur, Adv Technol & Dev Ctr, Kharagpur 721302, India.;Indian Inst Technol Kharagpur, Mat Sci Ctr, Kharagpur 721302, India.
Chandra, Amreesh (author)
Indian Inst Technol Kharagpur, Dept Phys, Kharagpur 721302, India.
Basori, Rabaya (author)
Indian Inst Technol Kharagpur, Sch Nanosci & Technol, Kharagpur 721302, India.
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Indian Inst Technol Kharagpur, Sch Nanosci & Technol, Kharagpur 721302, India Indian Inst Technol Kharagpur, Adv Technol & Dev Ctr, Kharagpur 721302, India. (creator_code:org_t)
Elsevier, 2023
2023
English.
In: Applied Surface Science. - : Elsevier. - 0169-4332 .- 1873-5584. ; 624
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Core-shell nanowire heterostructure is a new architecture for photodetector application with enlarged active surface area enhancing light absorption and photodetector performance. As an emanating coating material, SnS2 has a growing interest in next-generation optoelectronic materials. Here, we reported the enhanced optoelectronic performance of the hydrothermally grown SnS2 and Si nanowire (SiNWs) core-shell heterostructure. Hydrothermally grown SnS2 on Si nanowire creates a uniform coating over the entire surface of nanowires which enhances the heterostructure's effective junction area and improves optoelectronic performance over the broad spectral range (300 - 1100 nm). Specially, under 340 nm illumination, the core-shell photodetector exhibits large responsivity (-383 A/W) and extremely high external quantum efficiency (-2 x 105 %) at very low optical power (-20 nW/mm2). This SnS2/SiNWs core-shell heterostructure with significantly improved optoelectronic performance will be favourable for the development of photodetector with an ability to work with extremely high efficiency.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

SnS 2
Si nanowire
Core -shell heterostructure
EQE
Responsivity
Low-power photodetector
Enhanced active junction area
Cylindrical built-in-potential

Publication and Content Type

ref (subject category)
art (subject category)

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