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  • Choi, Jae WonChung Ang Univ, Ctr Berry Curvature Based New Phenomena, Dept Phys, Seoul 06974, South Korea. (författare)

Interface-driven seebeck effect in two-dimensional trilayer-stacked PtTe2/MoS2/MoS2 heterostructures via electron-electron interactions

  • Artikel/kapitelEngelska2023

Förlag, utgivningsår, omfång ...

  • Elsevier,2023
  • printrdacarrier

Nummerbeteckningar

  • LIBRIS-ID:oai:DiVA.org:uu-510094
  • https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-510094URI
  • https://doi.org/10.1016/j.nanoen.2023.108713DOI

Kompletterande språkuppgifter

  • Språk:engelska
  • Sammanfattning på:engelska

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Klassifikation

  • Ämneskategori:ref swepub-contenttype
  • Ämneskategori:art swepub-publicationtype

Anmärkningar

  • Two-dimensional (2D) platinum telluride (PtTe2), which is one of the promising metallic transition metal dichalcogenides, has been proven as an essential candidate for electronic devices, magnetic devices, type-II Dirac fermions, topological superconductors, and other optoelectronic applications. However, the formation and thermal transport as important thermoelectric (TE) device applications have not been realized in large-area 2D PtTe2 films due to their semi-metallic properties. Here, we report an innovative approach to enhance the in-plane TE power factors by piling the metallic PtTe2 films on high-resistance (> 10 MO) intrinsic MoS2 films to form bilayer-PtTe2/MoS2 (5 nm/7 nm)//sapphire and trilayer-PtTe2/MoS2/MoS2 (5 nm/7 nm/7 nm)//sapphire heterostructures via wet-transfer stacking method. Such approaches can be achieved by utilizing 2D/2D heterostructure to increase the electron effective mass due to the strong electron-electron interaction at interface under temperature gradient along the samples and ultimately increase Seebeck coefficients via interface-driven Seebeck effect along with a metallic high-conductivity top-PtTe2 films. The trilayer-stacked PtTe2/MoS2/MoS2 heterostructures exhibit an extremely high Seebeck coefficient of 21.6 mu V/K and power factor of similar to 0.2 mW/m.K-2, which are 231 % and similar to 727 %, higher than those of the metallic 5-nm-thick single PtTe2 film on the sapphire substrate, respectively. Our new physics and observation can pave the way toward an effective strategy for understating 2D/2D TMDC heterostructure materials for high Fig.-of-merit TE energy harvesting devices.

Ämnesord och genrebeteckningar

Biuppslag (personer, institutioner, konferenser, titlar ...)

  • Lee, Won-YongUppsala universitet,Fasta tillståndets elektronik(Swepub:uu)wonle827 (författare)
  • Kim, Si-HooChung Ang Univ, Ctr Berry Curvature Based New Phenomena, Dept Phys, Seoul 06974, South Korea. (författare)
  • Kang, Min-SungChung Ang Univ, Ctr Berry Curvature Based New Phenomena, Dept Phys, Seoul 06974, South Korea. (författare)
  • Cho, Jung-MinChung Ang Univ, Ctr Berry Curvature Based New Phenomena, Dept Phys, Seoul 06974, South Korea. (författare)
  • Park, No-WonChung Ang Univ, Ctr Berry Curvature Based New Phenomena, Dept Phys, Seoul 06974, South Korea. (författare)
  • Kwon, Hyeok JunChung Ang Univ, Ctr Berry Curvature Based New Phenomena, Dept Phys, Seoul 06974, South Korea. (författare)
  • Kim, Yun-HoChung Ang Univ, Ctr Berry Curvature Based New Phenomena, Dept Phys, Seoul 06974, South Korea. (författare)
  • Kim, Gil-SungChung Ang Univ, Ctr Berry Curvature Based New Phenomena, Dept Phys, Seoul 06974, South Korea. (författare)
  • Yoon, Young-GuiChung Ang Univ, Ctr Berry Curvature Based New Phenomena, Dept Phys, Seoul 06974, South Korea. (författare)
  • Lee, Sang-KwonChung Ang Univ, Ctr Berry Curvature Based New Phenomena, Dept Phys, Seoul 06974, South Korea. (författare)
  • Chung Ang Univ, Ctr Berry Curvature Based New Phenomena, Dept Phys, Seoul 06974, South Korea.Fasta tillståndets elektronik (creator_code:org_t)

Sammanhörande titlar

  • Ingår i:Nano Energy: Elsevier1152211-28552211-3282

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