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Interface-driven se...
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Choi, Jae WonChung Ang Univ, Ctr Berry Curvature Based New Phenomena, Dept Phys, Seoul 06974, South Korea.
(författare)
Interface-driven seebeck effect in two-dimensional trilayer-stacked PtTe2/MoS2/MoS2 heterostructures via electron-electron interactions
- Artikel/kapitelEngelska2023
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Elsevier,2023
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LIBRIS-ID:oai:DiVA.org:uu-510094
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https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-510094URI
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https://doi.org/10.1016/j.nanoen.2023.108713DOI
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Språk:engelska
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Sammanfattning på:engelska
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Ämneskategori:ref swepub-contenttype
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Ämneskategori:art swepub-publicationtype
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Two-dimensional (2D) platinum telluride (PtTe2), which is one of the promising metallic transition metal dichalcogenides, has been proven as an essential candidate for electronic devices, magnetic devices, type-II Dirac fermions, topological superconductors, and other optoelectronic applications. However, the formation and thermal transport as important thermoelectric (TE) device applications have not been realized in large-area 2D PtTe2 films due to their semi-metallic properties. Here, we report an innovative approach to enhance the in-plane TE power factors by piling the metallic PtTe2 films on high-resistance (> 10 MO) intrinsic MoS2 films to form bilayer-PtTe2/MoS2 (5 nm/7 nm)//sapphire and trilayer-PtTe2/MoS2/MoS2 (5 nm/7 nm/7 nm)//sapphire heterostructures via wet-transfer stacking method. Such approaches can be achieved by utilizing 2D/2D heterostructure to increase the electron effective mass due to the strong electron-electron interaction at interface under temperature gradient along the samples and ultimately increase Seebeck coefficients via interface-driven Seebeck effect along with a metallic high-conductivity top-PtTe2 films. The trilayer-stacked PtTe2/MoS2/MoS2 heterostructures exhibit an extremely high Seebeck coefficient of 21.6 mu V/K and power factor of similar to 0.2 mW/m.K-2, which are 231 % and similar to 727 %, higher than those of the metallic 5-nm-thick single PtTe2 film on the sapphire substrate, respectively. Our new physics and observation can pave the way toward an effective strategy for understating 2D/2D TMDC heterostructure materials for high Fig.-of-merit TE energy harvesting devices.
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Biuppslag (personer, institutioner, konferenser, titlar ...)
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Lee, Won-YongUppsala universitet,Fasta tillståndets elektronik(Swepub:uu)wonle827
(författare)
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Kim, Si-HooChung Ang Univ, Ctr Berry Curvature Based New Phenomena, Dept Phys, Seoul 06974, South Korea.
(författare)
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Kang, Min-SungChung Ang Univ, Ctr Berry Curvature Based New Phenomena, Dept Phys, Seoul 06974, South Korea.
(författare)
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Cho, Jung-MinChung Ang Univ, Ctr Berry Curvature Based New Phenomena, Dept Phys, Seoul 06974, South Korea.
(författare)
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Park, No-WonChung Ang Univ, Ctr Berry Curvature Based New Phenomena, Dept Phys, Seoul 06974, South Korea.
(författare)
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Kwon, Hyeok JunChung Ang Univ, Ctr Berry Curvature Based New Phenomena, Dept Phys, Seoul 06974, South Korea.
(författare)
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Kim, Yun-HoChung Ang Univ, Ctr Berry Curvature Based New Phenomena, Dept Phys, Seoul 06974, South Korea.
(författare)
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Kim, Gil-SungChung Ang Univ, Ctr Berry Curvature Based New Phenomena, Dept Phys, Seoul 06974, South Korea.
(författare)
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Yoon, Young-GuiChung Ang Univ, Ctr Berry Curvature Based New Phenomena, Dept Phys, Seoul 06974, South Korea.
(författare)
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Lee, Sang-KwonChung Ang Univ, Ctr Berry Curvature Based New Phenomena, Dept Phys, Seoul 06974, South Korea.
(författare)
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Chung Ang Univ, Ctr Berry Curvature Based New Phenomena, Dept Phys, Seoul 06974, South Korea.Fasta tillståndets elektronik
(creator_code:org_t)
Sammanhörande titlar
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Ingår i:Nano Energy: Elsevier1152211-28552211-3282
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Choi, Jae Won
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Lee, Won-Yong
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Kim, Si-Hoo
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Kang, Min-Sung
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Cho, Jung-Min
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Park, No-Won
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visa fler...
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Kwon, Hyeok Jun
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Kim, Yun-Ho
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Kim, Gil-Sung
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Yoon, Young-Gui
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Lee, Sang-Kwon
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