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Over 100 mV VOC Improvement for Rear Passivated ACIGS Ultra-Thin Solar Cells

Oliveira, Antonio (author)
INL Int Iberian Nanotechnol Lab, Ave Mestre Jose Veiga, P-4715330 Braga, Portugal.;Univ Aveiro, i3N, Campus Univ Santiago, P-3810193 Aveiro, Portugal.;Univ Aveiro, Dept Fis, Campus Univ Santiago, P-3810193 Aveiro, Portugal.
Curado, Marco (author)
INL Int Iberian Nanotechnol Lab, Ave Mestre Jose Veiga, P-4715330 Braga, Portugal.;Univ Coimbra, Dept Phys, CFisUC, P-3004516 Coimbra, Portugal.
Teixeira, Jennifer (author)
INL Int Iberian Nanotechnol Lab, Ave Mestre Jose Veiga, P-4715330 Braga, Portugal.
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Tome, Daniela (author)
INL Int Iberian Nanotechnol Lab, Ave Mestre Jose Veiga, P-4715330 Braga, Portugal.;Univ Nova Lisboa, NOVA Sch Sci & Technol, Dept Ciencia Mat, Campus Caparica, P-2829516 Caparica, Portugal.
Caha, Ihsan (author)
INL Int Iberian Nanotechnol Lab, Ave Mestre Jose Veiga, P-4715330 Braga, Portugal.
Oliveira, Kevin (author)
INL Int Iberian Nanotechnol Lab, Ave Mestre Jose Veiga, P-4715330 Braga, Portugal.
Lopes, Tomas (author)
INL Int Iberian Nanotechnol Lab, Ave Mestre Jose Veiga, P-4715330 Braga, Portugal.;Imec Div IMOMEC partner Solliance, Wetenschapspk 1, B-3590 Diepenbeek, Belgium.;Hasselt Univ, Inst Mat Res IMO, Agoralaangebouw H, B-3590 Diepenbeek, Belgium.;EnergyVille 2, Thor Pk 8320, B-3600 Genk, Belgium.
Monteiro, Margarida (author)
INL Int Iberian Nanotechnol Lab, Ave Mestre Jose Veiga, P-4715330 Braga, Portugal.;Imec Div IMOMEC partner Solliance, Wetenschapspk 1, B-3590 Diepenbeek, Belgium.;Hasselt Univ, Inst Mat Res IMO, Agoralaangebouw H, B-3590 Diepenbeek, Belgium.
Violas, Andre (author)
INL Int Iberian Nanotechnol Lab, Ave Mestre Jose Veiga, P-4715330 Braga, Portugal.;Univ Aveiro, Dept Fis, Campus Univ Santiago, P-3810193 Aveiro, Portugal.
Correira, Maria (author)
Univ Aveiro, i3N, Campus Univ Santiago, P-3810193 Aveiro, Portugal.;Univ Aveiro, Dept Fis, Campus Univ Santiago, P-3810193 Aveiro, Portugal.
Fernandes, Paulo (author)
INL Int Iberian Nanotechnol Lab, Ave Mestre Jose Veiga, P-4715330 Braga, Portugal.;Univ Aveiro, i3N, Campus Univ Santiago, P-3810193 Aveiro, Portugal.;Inst Politecn Porto, Inst Super Engn Porto, Dept Fis, CIETI, P-4200072 Porto, Portugal.
Deepak, Francis (author)
INL Int Iberian Nanotechnol Lab, Ave Mestre Jose Veiga, P-4715330 Braga, Portugal.
Edoff, Marika, 1965- (author)
Uppsala universitet,Solcellsteknik
Salome, Pedro (author)
INL Int Iberian Nanotechnol Lab, Ave Mestre Jose Veiga, P-4715330 Braga, Portugal.;Univ Aveiro, Dept Fis, Campus Univ Santiago, P-3810193 Aveiro, Portugal.
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INL Int Iberian Nanotechnol Lab, Ave Mestre Jose Veiga, P-4715330 Braga, Portugal;Univ Aveiro, i3N, Campus Univ Santiago, P-3810193 Aveiro, Portugal.;Univ Aveiro, Dept Fis, Campus Univ Santiago, P-3810193 Aveiro, Portugal. INL Int Iberian Nanotechnol Lab, Ave Mestre Jose Veiga, P-4715330 Braga, Portugal.;Univ Coimbra, Dept Phys, CFisUC, P-3004516 Coimbra, Portugal. (creator_code:org_t)
Wiley-VCH Verlagsgesellschaft, 2023
2023
English.
In: Advanced Functional Materials. - : Wiley-VCH Verlagsgesellschaft. - 1616-301X .- 1616-3028. ; 33:44
Related links:
https://urn.kb.se/re...
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https://doi.org/10.1...
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  • Journal article (peer-reviewed)
Abstract Subject headings
Close  
  • A decentralized energy system requires photovoltaic solutions to meet new aesthetic paradigms, such as lightness, flexibility, and new form factors. Notwithstanding, the materials shortage in the Green Transition is a concern gaining momentum due to their foreseen continuous demand. A fruitful strategy to shrink the absorber thickness, meeting aesthetic and shortage materials consumption targets, arises from interface passivation. However, a deep understanding of passivated systems is required to close the efficiency gap between ultra-thin and thin film devices, and to mono-Si. Herein, a (Ag,Cu)(In,Ga)Se-2 ultra-thin solar cell, with 92% passivated rear interface area, is compared with a conventional nonpassivated counterpart. A thin MoSe2 layer, for a quasi-ohmic contact, is present in the two architectures at the contacts, despite the passivated device narrow line scheme. The devices present striking differences in charge carrier dynamics. Electrical and optoelectronic analysis combined with SCAPS modelling suggest a lower recombination rate for the passivated device, through a reduction on the rear surface recombination velocity and overall defects, comparing with the reference solar cell. The new architecture allows for a 2% efficiency improvement on a 640 nm ultra-thin device, from 11% to 13%, stemming from an open circuit voltage increase of 108 mV.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

ACIGS
open circuit voltages
passivation
solar cells
ultra-thin layer

Publication and Content Type

ref (subject category)
art (subject category)

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