High Voltage Single Crystal Diamond Diodes

• Demonstration of a 2.5-kV diamond diode is provided by electrical measurements using a circular gold Schottky contact, with an area > 1 mm(2), on large area freestanding single-crystal diamond consisting of a thin high purity layer (< 1 X 10(13) [B]/cm(3)) on a thicker heavily boron-doped (> 1 X 10(19) [B]/cm(3)) substrate with an ohmic back contact. The diode structures were fabricated using a microwave-assisted chemical vapor deposition process. The forward properties of the diode show a space charge limited current, with a forward-voltage drop of 2 V and a hole mobility of 4100 +/- 400 cm(2) /Vs at room temperature. For temperatures between 300 K < T < 380 K the mobility show T-312 dependence. This is consistent with acoustic phonon scattering, emphasizing the high purity quality of the top layer in which carrier transport is phonon rather than defect limited.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Diamond

Electronics

Engineering Science with specialization in Electronics

Teknisk fysik med inriktning mot elektronik

Teknisk fysik med inriktning mot elektricitetslära

Engineering Science with specialization in Science of Electricity

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)