Defect evolution in MeV ion-implanted silicon

• Lightly doped silicon samples of both n- and p-type, have been implanted with low doses of H, B and Si ions using energies between 1 and 6 MeV. The resulting electrically active point defects were characterized by deep level transient spectroscopy (DLTS)

Nyckelord

LEVEL TRANSIENT SPECTROSCOPY; INTERSTITIAL CARBON; CRYSTALLINE SILICON; IRRADIATED SILICON; ELECTRON TRAPS; OXYGEN COMPLEX; POINT-DEFECTS; DOPED SILICON; DIFFUSION; SI

Publikations- och innehållstyp

vet (ämneskategori)

art (ämneskategori)