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DIVACANCY DISTRIBUTIONS IN FAST-ION IRRADIATED SILICON
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- HALLEN, A (author)
- Uppsala universitet
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- SVENSSON, BG (author)
- Uppsala universitet
- (creator_code:org_t)
- GORDON BREACH SCI PUBL LTD, 1994
- 1994
- English.
- In: RADIATION EFFECTS AND DEFECTS IN SOLIDS. - : GORDON BREACH SCI PUBL LTD. - 1042-0150. ; 128:3, s. 179-186
- Journal article (other academic/artistic)
Abstract
Subject headings
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- The distributions of divacancies of single negative charge state produced by fast ion irradiation (E greater than or equal to 1 MeV/nucleon) have been established by deep level transient spectroscopy (DLTS). The divacancy concentration profiles from irrad
Keyword
- PROTON IRRADIATION; SILICON; LIFETIME; DIVACANCY; STRAGGLING; DLTS; LEVEL TRANSIENT SPECTROSCOPY; PROTON IRRADIATION; DEFECT PRODUCTION; LIFETIME CONTROL; CHARGE STATE; ELECTRON; TRAPS
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- vet (subject category)
- art (subject category)
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