WFRF:(Olsson Jörgen)
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- Abermann, Stephan (author)
Comparative Study On The Impact Of TiN and Mo Metal Gates ON MOCVD-Grown HfO2 and ZrO2 High-k Dielectrics For CMOS Technology
- Article/chapterEnglish2006
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- 2006
- printrdacarrier
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- LIBRIS-ID:oai:DiVA.org:uu-94805
- https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-94805URI
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- Language:English
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- Sjöblom, GustafUppsala universitet,Fasta tillståndets elektronik(Swepub:uu)gusjo205 (author)
- Efavi, Johnson (author)
- Lemme, Max (author)
- Olsson, Jörgen,1966-Uppsala universitet,Fasta tillståndets elektronik(Swepub:uu)jorgolss (author)
- Bertagnolli, Emmerich (author)
- Uppsala universitetFasta tillståndets elektronik (creator_code:org_t)
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- In:Proceedings of 28th International Conference on the Physics of Semiconductors (ICPS)
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