SB-MOSFETs in UTB-SOI featuring PtSi source/drain with dopant segregation

• MOSFETs of both polarities with PtSi-based Schottky-barrier source/drain (S/D) have been fabricated in ultrathin-body Si-on-insulator. The PtSi is formed in the S/D regions without lateral silicide growth under the gate spacers. This design leads to a 30-nm underlap between the PtSi-Si contacts and the gate edges resulting in low drive currents. Despite the underlap, excellent performance is achieved for both types of MOSFETs with large drive currents and low leakage by means of dopant segregation through As and B implantation into the PtSi followed by drive-in annealing at low temperatures.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

dopant segregation (DS)

MOSFETs

platinum silicide

Schottky-barrier lowering

Schottky-barrier source/drain (SB-S/D)

ultrathin-body Si-on-insulator (UTB-SOI)

Electronics

Elektronik

Elektronik

Electronics

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