Effect of phosphorus implantation prior to oxidation on electrical properties of thermally grown SiO2/4H-SiC MOS structures

• The electrical properties of metal-oxide-semiconductor (MOS) devices fabricated using dry oxidation on phosphorus-implanted n-type 4H-SiC (0001) epilayers have been investigated. MOS structures were compared in terms of interface traps and reliability with reference sample which was produced by dry oxidation under the same conditions. The notably lower interface traps density measured in MOS capacitor with phosphorus concentration exceeding 1018 cm-3 at the SiO2/SiC interface was attributed to interface traps passivation by incorporated phosphorus ions. © (2015) Trans Tech Publications, Switzerland.

Nyckelord

4H-SiC

Implantation

Interface

MOS

Oxidation

Oxide

Phosphorus

Traps

TZDB

Dielectric devices

Interfaces (materials)

Ion implantation

Metals

Molybdenum

Oxide semiconductors

Oxides

Silica

Silicon carbide

Wide band gap semiconductors

Metal oxide semiconductor

Phosphorus concentration

Phosphorus ions

Reference samples

SiO2/SiC interface

MOS devices

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