Effects of substrate bias and temperature during titanium sputter-deposition on the phase formation in TiSi2

• The formation of titanium disilicide (TiSi2,) from Ti deposited using ionized metal plasma under different deposition conditions has been investigated. It is shown that deposition at elevated substrate temperature (450degreesC) enhances the formation of the low-resistivity C54 TiSi2, especially in patterned narrow lines. Grain-boundary footprint pictures obtained by atomic force microscopy indicate a larger grain-size distribution for the films deposited at higher substrate temperature. Deposition under substrate bias resulted in reduced contact resistivity. However, the use of substrate bias results in increased probability of bridging of silicide over the isolating spacers.

Nyckelord

titanium disilicide

TiSi2

substrate bias

substrate temperature

ionized metal plasma

collimated sputtering

phase transition

contact resistance

linewidth effect

ti thin-films

transformation temperature

integrated-circuits

enhanced formation

silicide

disilicide

c54-tisi2

mechanism

nucleation

morphology

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)