Complex crater formation on silicon surfaces by low-energy Ar cluster ion implantation

Popok, Vladimir,1966Chalmers tekniska högskola,Chalmers University of Technology (författare)

Silicon samples were implanted by small mass-selected Ar cluster and Ar+ monomer ions with energies in the range of 1.5-18.0 keV/ion. Atomic force microscopy (AFM) shows simple and complex crater formation on the Si surface at the collision spots. A typical complex crater is surrounded by a low-height (0.5 nm) rim and it encloses a centre-positioned cone-shaped hillock with height of up to 3.5 nm depending on the implantation conditions. The morphology and dimensions of the craters and hillocks are studied as a function of the cluster size and implantation energy. A model explaining the hillock formation with relation to the thermal-transfer effect and local target melting at the collision spot is proposed.

Prasalovich, Sergei,1976Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Gothenburg (författare)
Campbell, Eleanor E B,1960Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Gothenburg(Swepub:gu)xcamel (författare)
Chalmers tekniska högskolaInstitutionen för fysik (GU) (creator_code:org_t)

Av författaren/redakt...: Popok, Vladimir, ...; Prasalovich, Ser ...; Campbell, Eleano ...

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