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Conductance and pol...
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Popok, Vladimir,1966Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU)
(author)
Conductance and polarisability of C60 films
- Article/chapterEnglish2007
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LIBRIS-ID:oai:gup.ub.gu.se/63011
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https://gup.ub.gu.se/publication/63011URI
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Subject category:art swepub-publicationtype
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Thin films of C60 deposited in vacuum are studied using current-voltage (I-V) measurements and atomic force microscopy (AFM). In situ electrical measurements give an average resistivity of ca. 30 MΩcm for the as-deposited films at room temperature. The I-V dependences are found to correspond to ohmic behaviour but they have a hysteresis shape attributed to remnant polarisation due to the domain structure of the films. AFM images show a grainy surface morphology for the deposited C60. Temperature dependent measurements in the range 290-365 K provide evidence for a variable range hopping mechanism of conductance with an activation energy of 0.8-1.0 eV. With further temperature increase the C60 films restructure leading to an increase in grain size and a change of the electrical properties with I-V dependences showing Schottky barrier formation. The effect of oxygen on the conductance of the C60 films under their exposure to an ambient atmosphere is considered and discussed.
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Jönsson, Martin,1977Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU)(Swepub:gu)xjmarc
(author)
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Campbell, Eleanor E B,1960Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU)(Swepub:gu)xcamel
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Göteborgs universitetInstitutionen för fysik (GU)
(creator_code:org_t)
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In:Journal of Nanoscience and Nanotechnology7:4-5, s. 1434-1438
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