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Comparison of two S...
Comparison of two SiGe 2-stage E-band Power Amplifier Architectures
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- TIRED, TOBIAS (author)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
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- Sjöland, Henrik (author)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
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- Jönsson, Göran (author)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
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- Wernehag, Johan (author)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,System på chips (master),Utbildningsprogram, LTH,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH,Embedded Electronics Engineering (M.Sc.),Educational programmes, LTH,Faculty of Engineering, LTH
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(creator_code:org_t)
- 2017
- 2017
- English 4 s.
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In: IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016. - 9781509015702 ; 13, s. 666-669
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Abstract
Subject headings
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- This paper presents simulation and measurement results for two 2-stage E-band power amplifiers implemented in 0.18um SiGe technology with fT = 200 GHz. To increase the power gain by mitigating the effect of the base-collector capacitance, the first design uses a differential cascode topology with a 2.7 V supply voltage. The second design instead uses capacitive cross-coupling of a differential common emitter stage, previously not demonstrated in mm-wave SiGe PAs, and has a supply voltage of only 1.5V. Low supply voltage is advantageous since a common supply can then be shared between the transceiver and the PA. To maximize the power gain and robustness, both designs use a transformer based interstage matching. The cascode design achieves a measured power gain, S21 , of 16 dB at 92 GHz with 17GHz 3-dB bandwidth, and a simulated saturated output power, Psat , of 17 dBm with a 16% peak PAE. The cross-coupled design achieves a measured S21 of 10 dB at 93 GHz with 16 GHz 3-dB bandwidth, and a simulated Psat, of 15 dBm with 16% peak PAE. Comparing the measured and simulated results for the two amplifier architectures, the cascode topology is more robust, while the cross-coupled topology would benefit from a programmable cross-coupling capacitance.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- PA
- E-band
- SiGe
- PA
- E-band
- SiGe
Publication and Content Type
- kon (subject category)
- ref (subject category)
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