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Fabrication of Sing...
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Menon, HeeraLund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
(author)
Fabrication of Single-Crystalline InSb-on-Insulator by Rapid Melt Growth
- Article/chapterEnglish2022
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LIBRIS-ID:oai:lup.lub.lu.se:0321166a-6a89-46e1-b542-5754fb19aad0
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https://lup.lub.lu.se/record/0321166a-6a89-46e1-b542-5754fb19aad0URI
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https://doi.org/10.1002/pssa.202100467DOI
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Language:English
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Summary in:English
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Subject category:art swepub-publicationtype
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Notes
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InSb has the smallest bandgap and highest electron mobility among III-V semiconductors and is widely used for photodetectors and high-frequency electronic applications. Integration of InSb directly on Si would drastically reduce the fabrication cost and enable new applications, however, it is very challenging due to its 19% lattice mismatch with Si. Herein, the integration of single-crystalline InSb microstructures on insulator-covered Si through rapid melt growth (RMG) is reported and specifically provides details on the fabrication process. The importance of achieving high-quality conformal capping layers at low thermal budget to contain the InSb melt is assessed when the sample is annealed. The importance of ensuring a pristine Si seed area to achieve single-crystalline InSb is illustrated and demonstrated here for the first time.
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Morgan, Nicholas PaulSwiss Federal Institute of Technology
(author)
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Hetherington, CrispinLund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Centrum för analys och syntes,Kemiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Centre for Analysis and Synthesis,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)poly-cho
(author)
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Athle, RobinLund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ro1042at
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Steer, MatthewUniversity of Glasgow
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Thayne, IainUniversity of Glasgow
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Fontcuberta i Morral, AnnaSwiss Federal Institute of Technology
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Borg, MattiasLund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ma3352bo
(author)
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NanoLund: Centre for NanoscienceAnnan verksamhet, LTH
(creator_code:org_t)
Related titles
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In:Physica Status Solidi (A) Applications and Materials Science: Wiley219:41862-6300
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In:physica status solidi (a): Wiley219:41862-6319
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