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Influence of Ion Implantation on Magnetic, Structural and Optical Properties of (Ga,Mn)As Epitaxial Films

Yastrubchak, O. (author)
Domagala, J. Z. (author)
Sadowski, Janusz (author)
Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory
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Kulik, M. (author)
Zuk, J. (author)
Szymczak, R. (author)
Toth, A. L. (author)
Wosinski, T. (author)
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 (creator_code:org_t)
2008
2008
English.
In: ACTA PHYSICA POLONICA A. - 0587-4246. ; 114:5, s. 1445-1450
  • Conference paper (peer-reviewed)
Abstract Subject headings
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  • We performed implantation experiments; applying both the chemically active oxygen ions and inactive ions of neon noble gas, to thin epitaxial films of (Ga,Mn)As ferromagnetic semiconductor. Inspection of their magnetic properties by means of a superconducting quantum interference device magnetometer revealed that the implantation with a low dose of either O or Ne ions completely suppressed ferromagnetism in the films. Both the high resolution X-ray diffraction technique and the Raman spectroscopy showed significant changes in the structural and optical properties of the films caused by oxygen and neon implantation.

Subject headings

NATURVETENSKAP  -- Fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Publication and Content Type

kon (subject category)
ref (subject category)

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