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Doping of GaAsP nan...
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Sivakumar, SudhakarLund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
(author)
Doping of GaAsP nanowires grown by aerotaxy
- Article/chapterEnglish2019
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LIBRIS-ID:oai:lup.lub.lu.se:097bc01f-e0d2-4cbd-b1d5-883cd023bb6d
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https://lup.lub.lu.se/record/097bc01f-e0d2-4cbd-b1d5-883cd023bb6dURI
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Language:English
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Summary in:English
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Nanowire (NW) Photovoltaics are a promising route for low-cost multi-bandgap tandem cells, which is taxing in terms of processing and lattice matching in traditional planar geometries.[1] III-V nanowires are more suitable for monolithic integration as they can assimilate the lattice mismatch to a larger extent.[2] GaAsP is a material that offers a wide tunability of the band gap from near infrared (Eg = 1.42 eV) to visible regions (Eg = 2.3 eV) and is one of the best-suited materials for growth on silicon.[3]Controlled synthesis of GaAs(1-x)P(x) NWs with a bandgap ranging from 1.42 to 1.90 eV (at 300K) through the scalable Aerotaxy [4] technique has already been reported.[5]The present work concerns doping of GaAsP NWs by controlling precursor (DEZn) flows during growth by Aerotaxy. Here we present structural, optical and electrical studies of doped GaAs(1-x)P(x) NWs by high-resolution TEM, Photoluminescence, 4-point probe and Hall measurements.
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Geijselaers, IreneLund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ir6301ge
(author)
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Persson, AxelLund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Centrum för analys och syntes,Kemiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Centre for Analysis and Synthesis,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)chem-axp
(author)
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Wallenberg, ReineLund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Centrum för analys och syntes,Kemiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Centre for Analysis and Synthesis,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ook2-rwa
(author)
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Deppert, KnutLund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ftf-kde
(author)
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Samuelson, LarsLund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ftf-lsa
(author)
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Magnusson, Martin H.Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ftf-mm
(author)
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NanoLund: Centre for NanoscienceAnnan verksamhet, LTH
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